Results of an irradiation study on full scale HV-CMOS demonstrator chips will be presented. Samples were characterised using Edge-TCT and Sr90 measurement methods. With Edge-TCT the depleted depth was estimated for different substrate resistivities and neutron fluences. The study was complemented with measurements of charge deposited by MIPs from a Sr90 source. All measurements were performed on passive test structures using an external amplifier.