3-8 September 2017
The Open University, Milton Keynes, UK.
Europe/London timezone

Limits in point to point resolution of MOS based pixels detector arrays

5 Sep 2017, 16:05
20m
Berrill Lecture Theatre (OU) ()

Berrill Lecture Theatre (OU)

The Open University, Walton Hall, Milton Keynes, MK7 6AA

Speaker

Dr Nicolas Fourches (CEA/IRFU, Université Paris –Saclay, 91191 Gif/Yvette, France,)

Description

Point to point resolution is a key prerequisite for particle detector pixel arrays. In high energy physics current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors can reach a 5 µm limit, based on statistical measurements, with a pixel-pitch in the 10 µm range [1]. We present a design based on CMOS compatible technology that may reduce the pixel size to the submicron range, enabling a reduction of the resolution down to the submicron range. It physics principle relies on a buried carrier-localizing collecting gate. Although not yet practically implemented the process needed to fabricate this pixel is based on existing process steps used in Deep-Submicron silicon and SiGe microelectronics [2].The present paper is devoted to the evaluation of the building blocks with regard to the use of such pixel arrays for the accurate tracking of the charged particles in the silicon material.The bottlenecks and how to overcome them will be described. The role of the dimensions in the three directions of the pixel on the detection sequence will be studied. The pixel speed and the possibility of in-pixel circuit integration will be discussed. We’ll conclude by introducing similar pixels based on the FDSOI technology.

[1] N. Fourches, Y. Degerli, M. Besançon, A. Besson, G. Claus, G. Deptuch, W. Dulinski, M. Goffe, A. Himmi, Y. Li, P. Lutz, F. Orsini, and M. Szelezniak, “Performance of a Fast Programmable Active Pixel Sensor Chip Designed for Charged Particle Detection”, Contributed Talk (Nicolas Fourches), to the Nuclear Science Symposium, October 23-29, 2005, Porto Rico, 2005 IEEE Nuclear Science Symposium Record,N4-7, https://doi.org/10.1109/NSSMIC.2005.1596214

Y. Degerli,,M Besançon,A. Besson, G. Claus, G.; Deptuch, W. Dulinski, N Fourches, M. Goffe,A Himmi Y Li, P. Lutz, F. Orsini, M. Szelezniak, “Performance of a Fast Binary Readout CMOS Active Pixel Sensor Chip Designed for Charged Particle Detection”, IEEE Transactions on Nuclear Science, Volume 53,Issue 6,Part 2, Dec. 2006 Page(s): 3949 – 3955, https://doi.org/10.1109/TNS.2006.886151

[2] Nicolas T. Fourches, “Ultimate Pixel Based on a Single Transistor With Deep Trapping Gate”, IEEE Transactions On Electron Devices, Volume 64, Issue 4, (2017) 1619-1623
https://doi.org/10.1109/TED.2017.2670681

Primary author

Dr Nicolas Fourches (CEA/IRFU, Université Paris –Saclay, 91191 Gif/Yvette, France,)

Co-authors

Mr D. Desforge (1CEA/IRFU, Université Paris –Saclay, 91191 Gif/Yvette, France, ) Dr F. Jomard (Université de Versailles Saint Quentin en Yvelines, 55 avenue de Paris, 78000 Versailles) Mr F. Lepretre (3CEA/DEN/Jannus, Université Paris –Saclay, 91191 Gif/Yvette, France ) Dr G. Gutierrez (CEA/DEN/Jannus, Université Paris –Saclay, 91191 Gif/Yvette, France ) Mrs M. Kebbiri (1CEA/IRFU, Université Paris –Saclay, 91191 Gif/Yvette, France, ) Mr Vishant Kumar (CIMAP, Caen France) Mr X Coppolani (1CEA/IRFU, Université Paris –Saclay, 91191 Gif/Yvette, France, ) Dr Y Serruys (CEA/DEN/Jannus, Université Paris –Saclay, 91191 Gif/Yvette, France )

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