In order to meet the requirements of the High Luminosity LHC (HL-LHC), it will be necessary to replace the current tracker of the ATLAS experiment. Therefore, a new full-silicon tracking detector is planned, the so-called Inner Tracker (ITk). The use of quad chip modules is intended in its pixel region. These modules consist of a silicon sensor that forms a unit together with four readout chips.
The current ATLAS pixel detector consists of planar n-in-n silicon pixel sensors. Similar sensors and four FE-I4 read-out chips have been assembled to first prototypes of planar n-in-n quad modules. Main focus of the investigation of these modules was the region between the read-out chips, especially the central area between all four read-out chips. There are special pixel cells placed on the sensor which take the gap between the read-out chips into account.
This contribution focus on the characterization of a non-irradiated device, including important sensor characteristics, charge collection determined with radioactive sources and hit efficiency measurements, performed in laboratory and test beam.
Also presented are the first laboratory results of an irradiated device.