Speaker
Description
Electronic devices are strongly influenced by radiation and the need for radiation tolerant devices is growing for applications in environments with high radiation dose [1]. The effects due to radiation on electronic components are mainly: Total Ionizing Dose (TID), Displacement Damage (DD), and Single Event Effects (SEE). TID is a cumulative effect that changes the characteristics of electronic devices. DD can change the arrangement of the atoms in the lattice, modifying also component electrical properties. SEE can be a transient effect in which free charge, generated by heavy-ions directly into the device, may provoke data corruption or even a permanent device failure. In order to study TID radiation effects in electronic devices subjected to proton beams, is used a 1.7 MV 5SDH Pelletron accelerator of São Paulo University, which can produce proton beams with energies up to 3.0 MeV [2]. In order to study SEE at the 8.0 MV São Paulo University Pelletron accelerator, a new beam line was mounted to test electronic devices with heavy-ion beams [2]. The heavy-ion beam characteristics follow the requirements to test electronic devices for SEE recommended by the European Space Agency (ESA). This setup is being currently used to provoke failures in integrated circuits and to test the performance of redundancy and correction algorithms in FPGAs.
- Johnston, A., Reliability and Radiation Effects in Compound Semiconductors. World Sci. Pub. Co. Pte. Ltd., California Inst. of Tech., USA, 2010.
- Medina, N.H., et al.. Jour. Nucl. Phys., Mat. Sci., Rad. and Appl., v. 4, p. 13-23, 2016.
