31st RD50 Workshop (CERN)

Session

TCT

Nov 20, 2017, 5:10 PM

6/2-024 - BE Auditorium Meyrin (CERN)

Conveners

TCT

• Eckhart Fretwurst (II. Institut fuer Experimentalphysik)

34. TCT for characterization of interfaces resulting from CMOS compatible wafer bonding

Jacopo Bronuzzi (EPFL - Ecole Polytechnique Federale Lausanne (CH))

11/20/17, 5:10 PM

In the framework of monolithic active silicon sensors (MAPS), a new fabrication process that consists in bonding a CMOS wafer on a high resistivity silicon bulk which is used as the active sensor is investigated. In this way, it is possible to optimize both the read-out electronics and the sensing element. The electrical properties of the bonding interface are therefore important, since the...

42. TPA RD50 projects: status and plans

Marcos Fernandez Garcia (Universidad de Cantabria (ES))

11/20/17, 5:30 PM

This presentation will report on latest Two-Photon Absorption-TCT measurement campaigns carried out within 2 on-going RD50-projects, namely measurements of diodes and HVCMOS devices. The presentation will then focus on recent measurements of proton irradiated LGAD detectors, showing a clear double junction after 1e14 neq/cm2. Some other systematics of TPA measurements encountered so far will...

48. Plasma and Two Photon absorption technique

Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))

11/20/17, 5:50 PM

We present a theoretical model to predict the plasma delay time in the signal generated by the Two Photon Absorption technique and a confrontation with real measurements.