Feb 19 – 21, 2018
Max-Planck-Institut für Physik, Munich
Europe/Zurich timezone

Study of the radiation resistance of different LGAD gain layer designs.

Not scheduled
Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik (Werner-Heisenberg-Institut) Föhringer Ring 6 80805 München


Roberta Arcidiacono (Universita e INFN Torino (IT))


I will report on the radiation resistance of 50-micron thick LGAD detectors, manufactured at the Fondazione Bruno Kessler, employing several different types of gain layer. LGAD detectors with gain layer doping of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced. These sensors have been exposed to neutron fluences up to φn ∼ 3·10$^{16}$ n/cm$^2$ and to proton fluences up to φp ∼ 9·10$^{15}$ p/cm$^2$ to test their radiation resistance. The data show that Gallium-doped LGAD are more affected by initial acceptor removal than Boron-doped LGAD, while the presence of Carbon reduces the initial acceptor removal for both type of doping. Boron low-diffusion shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant width. This study also demonstrates that proton irradiation is at least twice more damaging than neutron irradiation.

Primary author

Roberta Arcidiacono (Universita e INFN Torino (IT))


Maurizio Boscardin (FBK Trento) Nicolo Cartiglia (INFN Torino (IT)) Gian-Franco Dalla Betta (INFN and University of Trento) Marco Ferrero (Universita e INFN Torino (IT)) Francesco Ficorella (FBK Trento) Marco Mandurrino (INFN) Lucio Pancheri (University of Trento) Giovanni Paternoster (Fondazione Bruno KEssler) Valentina Sola (Universita e INFN Torino (IT)) Amedeo Staiano (Universita e INFN Torino (IT))

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