Feb 19 – 21, 2018
Max-Planck-Institut für Physik, Munich
Europe/Zurich timezone

The INFN Pixel Sensor R&D for the HL-LHC Upgrade of the CMS Experiment

Not scheduled
15m
Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik, Munich

Max-Planck-Institut für Physik (Werner-Heisenberg-Institut) Föhringer Ring 6 80805 München

Speaker

Marco Meschini (Universita e INFN, Firenze (IT))

Description

The talk will report on the INFN research activity, in collaboration with FBK foundry, which is aiming at the development of new, thin, n-in-p pixel sensors for the CMS HL-LHC (Phase-2) upgrade. The talk will illustrate the main aspects of the research program, starting from the sensor design and fabrication technology, with an overview on next plans using both Direct Wafer Bonded (DWB) and Silicon On Insulator (SOI) wafers. The INFN RD covers both planar and columnar 3D pixel devices. Hybrid modules with R&D sensors connected to the PSI46dig readout chip have been tested on beam test experiments: recent results on planar Active Edge devices, with peripheral staggered trenches, and 3D pixel sensors will be reported.

Primary author

Marco Meschini (Universita e INFN, Firenze (IT))

Co-authors

Gian Franco Dalla Betta (Universita degli Studi di Trento (IT)) Alberto Messineo (INFN Sezione di Pisa, Universita' e Scuola Normale Superiore, P) Lorenzo Viliani (Universita e INFN, Firenze (IT)) Dr Mauro Dinardo (Universita & INFN, Milano-Bicocca (IT)) Davide Zuolo (Universita & INFN, Milano-Bicocca (IT))

Presentation materials

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