24–28 Jun 2018
Sundsvall
Europe/Zurich timezone

Characterization of silicon sensors for the soft X-ray energy range

27 Jun 2018, 16:00
1h
Quality Hotel, Folkets Hus (Sundsvall)

Quality Hotel, Folkets Hus

Sundsvall

Esplanaden 29 Sundsvall, Sweden

Speaker

Sabina Chiriotti Alvarez (PSI - Paul Scherrer Institut)

Description

The MÖNCH [1] detector is a low-noise charge-integrating hybrid pixel detector with 25 μm pixel pitch currently being developed at the Paul Scherrer Institut (PSI) optimized to be used in soft X-ray applications at synchrotrons and X-ray free electron lasers (XFELs). Suitable instruments for experiments in the soft X-ray energy range (250–2000 eV) present several technological challenges. Detectors should provide high Detective Quantum Efficiency (DQE), high Signal-to-Noise Ratio (SNR), high resolution, large dynamic range and need to handle frame rates higher than 1kHz. Additionally, they need to be operational under high vacuum conditions.

MÖNCH 03 [2], a prototype readout chip of the detector, meets most of the requirements to be used in soft X-ray experiments due to its remarkable low noise performance of 36 e- ENC and single photon resolution. But some optimizations are still needed such as reducing the thickness of the sensor backside implant for an improved quantum efficiency below 4 keV. Therefore, the aim of this work is to optimize the DQE of the MÖNCH detector with a thin entrance window to increase the detection efficiency in the soft X-ray regime.

Four silicon sensors with different entrance windows were produced at FBK and bump-bonded to the MÖNCH readout chip. The four prototypes of 160x160 pixels with 25 μm pitch (4 x 4 mm$^{2}$ of active area) were investigated using X-ray photons with energies between 400-2000 eV at the SIM beamline of the Swiss Light Source at PSI. The quantum efficiency of the four sensors has been compared and the thickness of the entrance window has been estimated. Additionally, the noise of the detection system has been measured as a function of the integration time and of the applied bias voltage. In this contribution, the first results of the DQE measured with the four sensors will be presented and discussed.

[1] R. Dinapoli et al, J. Instrum. 9 (2014) p. C050115.
[2] M. Ramilli et al, J. Instrum. 12 (2017) p. C01071.

Primary authors

Sabina Chiriotti Alvarez (PSI - Paul Scherrer Institut) Marie Andrä (PSI - Paul Scherrer Institut) Rebecca Barten (Paul Scherrer Institut) Anna Bergamaschi (PSI) Giacomo Borghi (Fondazione Bruno Kessler (FBK)) Maurizio Boscardin (FBK Trento) Martin Brückner (PSI - Paul Scherrer Institut) Roberto Dinapoli (Paul Scherrer Institut) Erik Fröjd (Paul Scherrer Institut (PSI)) Dominic Greiffenberg (PSI - Paul Scherrer Institute) Manuel Langer (Paul Scherrer Institut (PSI)) Carlos Lopez-Cuenca (Paul Scherrer Institut) Davide Mezza Aldo Mozzanica (PSI - Paul Scherrer Institut) Jörg Raabe (Paul Scherrer Institut (PSI)) Marco Ramilli (Paul Scherrer Institut) Sophie Redford (PSI - Paul Scherrer Institut) Sabina Ronchin (FBK) Christian Ruder (Paul Scherrer Institut) Bernd Schmitt (Paul Scherrer Institut) Xintian Shi (Paul Scherrer Institute) Dhanya Thattil (Paul Scherrer Institut) Gemma Tinti Seraphin Vetter (Paul Scherrer Institut) Jiaguo Zhang (Paul Scherrer Institut)

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