10-16 June 2018
Dalhousie University
America/Halifax timezone
Welcome to the 2018 CAP Congress Program website! / Bienvenue au siteweb du programme du Congrès de l'ACP 2018!

Hydrogen Generation and Co-deposition in Electroless Copper Plating

12 Jun 2018, 13:30
15m
SUB 302 (cap.40) (Dalhousie University)

SUB 302 (cap.40)

Dalhousie University

Oral (Non-Student) / Orale (non-étudiant(e)) Surface Science / Science des surfaces (DSS) T3-7 Surface Sciences (DSS) I Science des surfaces (DSS)

Speaker

Tanu Sharma (Mount Allison University)

Description

Electroless copper films are used in printed circuit board industry to establish a conductive layer on insulating substrates. These films may have failures (voids, blisters) related to stress and/or hydrogen co-deposition in Cu films. Typical methods to determine amount of hydrogen are destructive and indirect. We have developed a time-resolved method to measure amount of hydrogen released from Cu deposits after plating. At ambient conditions, films with high initial hydrogen loading release hydrogen for several days. Hydrogen content and hydrogen-related compressive film stress component in copper are proportional with a slope of (3.2±0.3) MPa/at.% H. Nickel, as an additive, promotes adhesion and changes stress in electroless copper film from compressive to tensile. The present work shows that nickel suppresses hydrogen incorporation into the Cu film from typically 25 to 0.01 at.% (thus explaining the stress effect), while hydrogen release during plating remains almost unchanged.

Primary authors

Tanu Sharma (Mount Allison University) Alexandre E Landry (Mount Allison) Alexandre Leger (Mount Allison) Ms Delilah A Brown (Mount Allison University) Ralf Bruening (Mount Allison University) Tobias Bernhard (Atotech Deutschland GmbH) Sebastian Zarwell (Atotech Deutschland GmbH) Dr Frank Bruening (Atotech)

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