Speaker
Marco Caputo
(Paul Scherrer Institut, École Polytechnique Fédérale de Lausanne)
Description
Transition Metal Oxides (TMO) represent an ideal platform to exploit exotic phenomena in solid state physics. Conductivity and superconductivity in the Two Dimensional Electron System (2DES) at the LAO3/STO3 (LAO/STO) interface is one of them.
The 2DES sits on the STO part of the interface, in a potential well created by band bending. Reducing the thickness of the hosting STO material can be a tool for tuning interesting properties, like quantum well population and polaronic coupling.
In this work we analyze the electronic structure of a LAO/STO interface, where the STO side is a thin layer of few unit cells.
Authors
Marco Caputo
(Paul Scherrer Institut, École Polytechnique Fédérale de Lausanne)
Prof.
Alessio Filippetti
(University of Cagliari)
Mrs
Margherita Boselli
(University of Geneva)
Dr
Alla Chikina
(Paul Scherrer Institut)
Prof.
Jan Hugo Dil
(École Polytechnique Fédérale de Lausanne)
Dr
Claudia Cancellieri
(EMPA)
Dr
Stefano Gariglio
(University of Geneva)
Prof.
Jean-Marc Triscone
(University of Geneva)
Dr
Vladimir N. Strocov
(Paul Scherrer Institut)