OVERMOS is a MAPS detector test structure fabricated using high resistivity substrate in 180nm CMOS process provided by TowerJazz.It consists of several arrays of 40 x 40 um2 and 40 x 400 um2 pixels which also feature in-pixel CA and full analogue read out.
A number of these device have been irradiated with neutrons and are currently being tested to investigate radiation damage effects.
Extensive 3D device simulations, including CMOS fabrication process simulations, have been performed using Synopsis TCAD. Modelling of device electrical behaviour, including breakdown process, which acount for radiation bulk damage effects and Si/SiO2 traps defects have been performed, using different implementation of radiation damage models. Results of simulations and comparisons with test results will be presented and discussed.