4-6 June 2018
Hamburg
Europe/Zurich timezone

TCAD Process and device simulation of OVERMOS, a CMOS 180nm MAPS detector

4 Jun 2018, 15:00
20m
Auditorium (Hamburg)

Auditorium

Hamburg

DESY, CSSB (Blg. 15)

Speaker

Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB))

Description

OVERMOS is a MAPS detector test structure fabricated using high resistivity substrate in 180nm CMOS process provided by TowerJazz.It consists of several arrays of 40 x 40 um2 and 40 x 400 um2 pixels which also feature in-pixel CA and full analogue read out.
A number of these device have been irradiated with neutrons and are currently being tested to investigate radiation damage effects.
Extensive 3D device simulations, including CMOS fabrication process simulations, have been performed using Synopsis TCAD. Modelling of device electrical behaviour, including breakdown process, which acount for radiation bulk damage effects and Si/SiO2 traps defects have been performed, using different implementation of radiation damage models. Results of simulations and comparisons with test results will be presented and discussed.

Primary authors

Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB)) Fergus Wilson (Science and Technology Facilities Council STFC (GB)) Zhige Zhang (Science and Technology Facilities Council STFC (GB)) Iain Sedgwick (STFC) Jens Dopke (Science and Technology Facilities Council STFC (GB)) Steven Worm (University of Birmingham) Marcus Julian French (Science and Technology Facilities Council STFC (GB)) Dr Stephen Mcmahon (Science and Technology Facilities Council STFC (GB)) Paul Seller (RAL) Liejian Chen (Chinese Academy of Sciences (CN)) Zhijun Liang (Chinese Academy of Sciences (CN)) Qinglei Xiu (Chinese Academy of Sciences (CN)) Hongbo Zhu (Chinese Academy of Sciences (CN))

Presentation Materials