2-7 June 2019
Simon Fraser University
America/Vancouver timezone
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Investigation of radiation damage centers in highly isotopically enriched silicon-28 as potential single spin qubits accessible via spin/photon coupling

5 Jun 2019, 13:15
BLU 10011 (Simon Fraser University)

BLU 10011

Simon Fraser University

Invited Speaker / Conférencier(ère) invité(e) Division of Atomic, Molecular and Optical Physics, Canada / Division de la physique atomique, moléculaire et photonique, Canada (DAMOPC-DPAMPC) W2-2 Quantum Information (DAMOPC/DTP) | Information quantique (DPAMPC/DPT)


Prof. Mike Thewalt (Department of Physics, SFU)


The remarkable optical properties of highly isotopically enriched silicon-28, resulting from the near-elimination of inhomogeneous broadening mechanisms, has led to the optical control and measurement of the electronic and nuclear spins of ensembles of shallow donor impurities, resulting in some record solid state coherence times. [1.2] These optical transition unfortunately have too low a dipole moment and emission efficiency to allow for single spin readout using cavity QED. A different, deep donor, transition has been proposed for enabling a cavity QED based spin/photon platform using integrated silicon photonics, but it has the disadvantage of operating at the rather difficult wavelength of 2.9 microns. [3] Our recent discovery that well-known silicon radiation damage centers have remarkably narrow linewidths in silicon-28 [4] led us to investigate these centers as possible spin qubits. Some of these centers have the advantage of optical transitions in the 1.3 to 1.6 micron telecom bands. I will describe our recent unpublished results for one center which has long electron and nuclear spin coherence times, good emission efficiency, and an oscillator strength which should allow spin/photon coupling using cavity QED in an integrated silicon photonics platform.

[1] M. Steger, K. Saeedi, M.L.W. Thewalt, J.J.L. Morton, H. Riemann, N.V. Abrosimov, P. Becker, H-J. Pohl, Quantum information storage for over 180 s using donor spins in a 28Si “semiconductor vacuum”. Science 336, 1280–1283 (2012).
[2] K. Saeedi, S. Simmons, J. Z. Salvail, P. Dluhy, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, J. J. L. Morton, M. L. W. Thewalt, Room-temperature quantum bit storage exceeding 39 minutes using ionized donors in silicon-28. Science 342, 830–833 (2013).
[3] K. J. Morse, R. J. S. Abraham, A. DeAbreu, C. Bowness, T. S. Richards, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, and S. Simmons. A photonic platform for donor spin qubits in silicon. Science Advances, 3(7), 2017.
[4] C. Chartrand, L. Bergeron, K. J. Morse, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, S. Simmons, M. L. W. Thewalt, Highly enriched 28Si reveals remarkable optical linewidths and fine structure for well-known damage centers. Phys. Rev. B 98, 195201 (2018).

Primary author

Prof. Mike Thewalt (Department of Physics, SFU)

Presentation Materials