2-7 June 2019
Simon Fraser University
America/Vancouver timezone
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Possible Flexoelectric Origin of the Lifshitz Transition in Strontium Titanate Interfaces

5 Jun 2019, 13:15
ASB 10900 (Simon Fraser University)

ASB 10900

Simon Fraser University

Oral (Non-Student) / Orale (non-étudiant(e)) Condensed Matter and Materials Physics / Physique de la matière condensée et matériaux (DCMMP-DPMCM) W2-7 Condensed Matter Theory I (DCMMP) | Théorie de la matière condensée I (DPMCM)


Bill Atkinson (Trent University)


Multiple experiments have observed a sharp transition in the band structure of LaAlO$_3$/SrTiO$_3$ (001) interfaces as a function of applied gate voltage. This Lifshitz transition, between a single occupied band at low electron density and multiple occupied bands at high density, is remarkable for its abruptness. In this work, we propose a mechanism by which such a transition might happen. We show via numerical modeling that the simultaneous coupling of the dielectric polarization to the interfacial strain ("electrostrictive coupling'') and strain gradient ("flexoelectric coupling'') generates a thin polarized layer whose direction reverses at a critical density. The Lifshitz transition occurs concomitantly with the polarization reversal and is first-order at $T=0$. A secondary Lifshitz transition, in which electrons spread out into semiclassical tails, occurs at a higher density.

Primary authors

Bill Atkinson (Trent University) Amany Raslan (Trent University)

Presentation Materials