PSD12: The 12th International Conference on Position Sensitive Detectors

Current-voltage characteristics of Iron-implanted silicon based Schottky diodes.

Not scheduled

20m

Teaching and Learning Building (University of Birmingham)

poster Detectors for High Radiation and Extreme Environments

Speaker

Mr Joseph Bodunrin (Department of Physics, College, Science, Engineering and Technology, University of South Africa, Private Bag X6, Florida, 1710, South Africa)

Description

Current-voltage (I-V) measurements were carried out on undoped and Iron (Fe) doped n- silicon to establish and study a change in electrical properties of the material-based diodes with Fe doping concentration. Fe doping was achieved by implantation at the energy of 160 keV to fluences of 10^15, 10^16 and 10^17 ion/cm^2. The obtained results indicated that the Au/n-Si/Al and Au/Fe-n-Si/Al diodes were well fabricated and Fe doping resulted to diode behaviour changing from normal exponential to ohmic I-V behaviour. This ohmic behaviour was explained in terms of Fe-induced defect levels that were positioned at the centre of the energy gap. An I-V ohmic region increase with fluence indicating that the density of defect levels increases with Fe implantation fluence. The obtained (I-V) properties of Fe doped silicon-based diodes were similar to those of the diodes that were fabricated on radiation-hard materials indicating that Fe, too, is a promising dopant in a quest to improve radiation-hardness of Si to be used in high energy physics experiments.