Sep 12 – 17, 2021
University of Birmingham
Europe/London timezone

Simulations of charge collection of a gallium-nitride-based pin thin-film neutron detector

Sep 15, 2021, 12:51 PM
Teaching and Learning Building (University of Birmingham)

Teaching and Learning Building

University of Birmingham

Edgbaston Campus University of Birmingham B15 2TT UK


Zhongming Zhang (Lancaster University)


The development of new fast neutron reactors and nuclear fusion reactors requires new neutron detectors in extreme environments. Due to its wide bandgap (3.4 eV) and radiation resistance capability, gallium nitride (GaN) is a candidate for neutron detection in extreme environments. In this study, a GaN-based pin thin-film thermal neutron detector with lithium fluoride (LiF) converter layer is modelled by Geant4. After obtaining the neutron energy deposition distribution in the sensitive volume of the detector, the Hecht equation is used to calculate the charge collection efficiency at different position of the detector under a uniform electric field. In addition, considering charge recombination processes, the Shockley-Ramo theorem is applied to obtain more accurate simulation results. The result of the charge collection simulations is used to study its influence on the californium-252 ($^{252}$Cf) energy spectrum measurement of the detector.

Title Mr
Your name Zhongming Zhang
Institute Lancaster University

Primary authors

Zhongming Zhang (Lancaster University) Dr Michael Aspinall (Lancaster University)

Presentation materials