Speaker
Description
The development of new fast neutron reactors and nuclear fusion reactors requires new neutron detectors in extreme environments. Due to its wide bandgap (3.4 eV) and radiation resistance capability, gallium nitride (GaN) is a candidate for neutron detection in extreme environments. In this study, a GaN-based pin thin-film thermal neutron detector with lithium fluoride (LiF) converter layer is modelled by Geant4. After obtaining the neutron energy deposition distribution in the sensitive volume of the detector, the Hecht equation is used to calculate the charge collection efficiency at different position of the detector under a uniform electric field. In addition, considering charge recombination processes, the Shockley-Ramo theorem is applied to obtain more accurate simulation results. The result of the charge collection simulations is used to study its influence on the californium-252 ($^{252}$Cf) energy spectrum measurement of the detector.
| Title | Mr |
|---|---|
| Your name | Zhongming Zhang |
| Institute | Lancaster University |
| z.zhang56@lancaster.ac.uk |
