Speaker
Description
The Transient Current Technique (TCT) is widely used in the field of silicon particle
detector development. So far, mainly Single Photon Absorption – Transient Current
Technique (SPA-TCT) was performed, using laser wavelengths with a photon energy
larger than or similar to the silicon band-gap. Recently, measurements employing two
photon absorption for the testing of the silicon bulk properties were carried out for
the first time. Excess charge carriers are generated only in a small volume (approx. 1
um x 1um x 20 um) around the focal point of the laser beam, so that resolution in all
three spatial directions is achieved. Furthermore, compared to what is customary in
SPA-TCT, the resolution perpendicular to the incident laser beam was increased one
order of magnitude. Following the initial success of the method, a compact Two
Photon Absorption – Transient Current Technique (TPA-TCT) setup has been
developed and first measurements were performed. The current status of the setup
and the results obtained on non-irradiated silicon strip and LGAD sensors as well as
irradiated LGAD sensors will be covered in this talk.
| Title | Mr |
|---|---|
| Your name | Sebastian Pape |
| Institute | CERN / TU Dortmund University |
| sebastian.pape@chern.ch | |
| Nationality | german |
