Sep 12 – 17, 2021
University of Birmingham
Europe/London timezone

TCAD Simulation of Radiation Hard n-MCz and n-Fz Si Microstrip Detector for the HL-LHC

Sep 17, 2021, 10:32 AM
Teaching and Learning Building (University of Birmingham)

Teaching and Learning Building

University of Birmingham

Edgbaston Campus University of Birmingham B15 2TT UK
poster Detectors for High Radiation and Extreme Environments Poster Session 7 (Detectors for High Radiation and Extreme Environments)


Mrs Balwinder Kaur (Chandigarh University)


Radiation damage of the silicon strip detectors in the HL-LHC experiments pretenses a major task for its reliable long –term operation of the experiment. Radiation hard Si detectors have used in the new CMS tracker detector at HL-LHC in 2026. It has been observed that n-MCz and n-Fz Si as a material can be used for the Si microstrip detector. The strip detector design for this material should be simulated using TCAD simulation and optimized to get the high CCE. In order to understand the charge collection behavior of the n-MCz/n-Fz Si detector, we have compared the radiation damage effects in the mixed irradiated n-MCz Si and neutron irradiated n-Fz Si microstrip detector equipped with metal overhang and multiple guard rings.
In this paper, we have shown an optimal design of the radiation hard n-MCz Si/n-Fz Si strip detector design for the HL-LHC experiment in order to get high CCE.

Your name Balwinder Kaur
Institute Department of Physics (UIS), Chandigarh University, Gharuan, Mohali, India
Nationality Indian
Title Mrs

Primary authors

Dr. Ajay Kumar Srivastava (Chandigarh University) Mrs Balwinder Kaur (Chandigarh University) Ms Nitu Saini (Chandigarh University) Ms Shilpa Patiyal (Chandigarh University) Ms Ekta Jasrotia (Chandigarh Univerity)

Presentation materials