Speaker
Description
Indium gallium arsenide (InGaAs) photodiodes have been widly used in space domain, such as satellite attitude control, optical communications, and satellite remote sensing. But when used in these environment, their will be damaged by particles or rays, which would lead to the parameter degradiation or even functional failure. The mainly radaition damage induced by particles or rays of InGaAs photodiodes are ionizing effects and displacement damage effects.
In this work, the displacement damage effects on InGaAs p-i-n photodetectors induced by neutron at China Spallation Neutron Source (CSNS) are analyzed. The InGaAs p-i-n photodetector underd invertigated were fabricated with top illumination structure. The active diameter is abount 60 µm, and the response sepctrum are ranging from 900 nm~1700 nm. The experment were carried out at CSNS. The neutron energy are ranging form 1eV to 200MeV. The forward and reverse bias current-voltage (I-V) and capacitance-voltage (C-V) under the dark environment are measured before and after neutron radiation at room invironment. The frequency of the C-V measurement are ranging from 10 kHz to 5 MHz. The mechanism of displacement damage effects on the I-V and C-V characters of InGaAs p-i-n photodetectors are analyzed.
| Submission declaration | Original and unpublished |
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