This contribution presents the investigation of radiation damage on ATLASpix1_M2, which is one of the design variants of ATLASpix1 chip. ATLASpix1 is a large area (1 cm x 1.3 cm) High Voltage CMOS (HVCMOS) sensor prototype in 180nm technology. ATLASpix1_M2 is originally designed targeting the requirements of ATLAS ITk layer 4. It has a novel data transfer scheme from pixels to periphery where the readout circuitry is located. The ATLASpix1_M2 prototype supports triggered readout. For this purpose, a Content Addressable Buffer (CAB) which stores the hit data untill an on-chip programmable latency has been designed. The digital block contains a novel multiplexer based serializer and an 8b/10b pipelined encoder which will be presented in this work. The serial data link is tested to work at 1.28 Gbps which meets the requirement of ATLAS ITk. The chip was irradiated in steps reaching a total radiation dose of 100 MRad. The pixel and readout electronics is fully functional after irradiation. We were able to perform threshold tunning which resulted in 2 x reduction in threshold dispersion across the matrix (320x56). The effect of radiation on leakage current, signal to noise ratio and power consumpution are studied. This work presents the functional testing of ATLASpix1_M2 chip under X-ray irradiation.
|Submission declaration||Original and unpublished|