Speaker
Marco Ferrero
(Universita e INFN Torino (IT))
Description
This contribution is focusing on two main topics in UFSD characterization: uniformity of gain in a UFSD productions and effect of the irradiation on these sensors.
In the first part of this contribution I will report on the measurements of the gain layer uniformity performed on UFSD sensors manufactured by Hamamatsu Photonics (HPK) and by Fondazione Bruno Kessler (FBK).
The second part of this contribution is on the effect on the irradiation on UFSD and PiN detectors. We measured the acceptor creation and trapping mechanisms up to fluences of 1E16 n/cm2, and for both effects we saw the onset of saturation.
Primary author
Marco Ferrero
(Universita e INFN Torino (IT))
Co-authors
Nicolo Cartiglia
(INFN Torino (IT))
Roberta Arcidiacono
(Universita e INFN Torino (IT))
Valentina Sola
(Universita e INFN Torino (IT))
Maria Margherita Obertino
(Universita e INFN Torino (IT))
Marco Mandurrino
(INFN)
Federico Siviero
(INFN - National Institute for Nuclear Physics)
Marta Tornago
Amedeo Staiano
(Universita e INFN Torino (IT))
Giovanni Paternoster
(Fondazione Bruno KEssler)
Maurizio Boscardin
(FBK Trento)
Giacomo Borghi
(TERA Foundation (IT))
Lucio Pancheri
(University of Trento)
Gian-Franco Dalla Betta
(INFN and University of Trento)
Francesco Ficorella
(FBK)
