7–10 Sept 2020
Europe/Zurich timezone
20. konference českých a slovenských fyziků

NITRIDE MULTIPLE QUANTUM WELL CHALLENGE

9 Sept 2020, 14:45
20m
lecture hall T1 (building A)

lecture hall T1

building A

Speaker

Oswald J. (Institute of Physics CAS, v.v.i., Prague)

Description

Nitride semiconductor heterostructures are widely used for light-emitting, high-power and
high-frequency applications. But InGaN/GaN multiple quantum well (QW) structures are also
potential candidates for scintillation detectors. This application needs completely different
design of the heterostructure in comparison with LED one. It opens new problems that have
not been solved yet. Main technological challenge for scintillator structure design is the
demand for thick active regions with a higher number of QWs compared to that for LED
structures due to the high penetration depth like high energy electrons or X-ray radiation.
Another challenge is usually extremely low excitation intensity of ionizing radiation. Under
such conditions, the excitonic QW luminescence can have even lower intensity than different
kinds of defect bands originating either in GaN or in InGaN QWs. Our ability to realize
scintillators on an InGaN/GaN base will be presented and influence of number of QWs in the
structure on luminescence properties will described and discussed.

Primary author

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