Name: The 37th RD50 Workshop (Zagreb -- online Workshop)
Start: 2020-11-18T09:00:00+01:00
End: 2020-11-20T18:40:00+01:00
Location: No location set

The 37th RD50 Workshop (Zagreb -- online Workshop)

from Wednesday 18 November 2020 (09:00) to Friday 20 November 2020 (18:40)

Monday 16 November 2020
Tuesday 17 November 2020
Wednesday 18 November 2020
09:00
09:00 - 09:20
Contributions

09:00 Workshop opening - Aneliya Karadzhinova-Ferrer (Rudjer Boskovic Institute (HR)) Michael Moll (CERN)
09:20 Defect Characterization
Defect Characterization
09:20 - 13:30
Contributions

09:20 Structural, compositional and defect studies on hadron irradiated B-doped silicon diodes - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

09:40 Defect investigations of electron irradiated p-type Si sensors - Anja Himmerlich (CERN)

10:00 The boron-oxygen (BiOi) defect complex induced by irradiation with 23 GeV protons in p-type epitaxial silicon diodes - Chuan Liao (Hamburg University (DE))

10:20 An increase of the quantum yield in highly irradiated Si. - Juozas Vaitkus (Vilnius University )

10:50 Alpha irradiation induced stability studies in single crystal diamond radiation detectors - N V L Narasimha Murty (Associate Professor, IIT Tirupati)

11:10 Electron, neutron and proton irradiation effects on four-quadrant SiC radiation detectors - Joan Marc Rafí (Instituto de Microelectrónica de Barcelona, CNM-CSIC)

11:30 Discussion: Defect and Material Characterization - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
13:30
13:30 - 16:40
Contributions

13:30 Analysis of I-V characteristics as a method in the study of radiation degradation of Si detectors - Vladimir Eremin (Ioffe Institute)

13:50 Radiation effects in the CMS phase 1 pixel detector - Danyyl Brzhechko (Universitaet Zuerich (CH))

14:10 Measurements of Sensor Radiation Damage inthe ATLAS Inner Detector using Leakage Currents - Aidan Grummer (University of New Mexico (US)) Sally Seidel (University of New Mexico (US))

14:30 Determination of proton hardness factors with commercial PiN diodes - Patrick Ryan Knights (University of Birmingham (GB))

14:50 Gamma, neutron, proton irradiated p-type silicon MOS capacitors with aluminium oxide. - Maria Golovleva (Lappeenranta University of Technology, Helsinki Institute of physics)

15:30 Irradiation of gate-controlled diodes and MOS capacitors with $^{60}$Co-gamma photons - Patrick Asenov (Nat. Cent. for Sci. Res. Demokritos (GR))

15:50 Update on radiation damage investigation of epitaxial p-type silicon using Schottky and pn-junction diodes - Christoph Thomas Klein (Carleton University (CA))

16:10 Discussion: Detector Characterization and Simulation - Gianluigi Casse (University of Liverpool (GB)) Joern Schwandt (Hamburg University (DE))
17:30

17:30 - 19:30
Thursday 19 November 2020
09:00 Transient Current Techniques (Thursday)
Transient Current Techniques (Thursday)
09:00 - 11:20
Contributions

09:00 Investigation of the amplitude decrease in subsequent pulse detection in irradiated silicon sensors - Leena Diehl (Albert Ludwigs Universitaet Freiburg (DE))

09:20 Charge collection characterization of irradiated diode using a novel edge-on electron beam technique - Mohammadtaghi Hajheidari (Hamburg University (DE))

09:40 An update report on the upgrade of the TCT - TPA/SPA experimental station at the ELI Beamlines facility - Gordana Medin (University of Montenegro)

09:55 The first TPA signal in LGAD (HPK-P2/HGTD and FBK-W1/UFSD) and PIN using the ELI fs-laser - Gordana Medin (University of Montenegro)

10:10 Capabilities of testing detectors for high energy physics by MeV energy ions - Milko Jaksic (Rudjer Boskovic Institute, Zagreb, Croatia)

10:40 Characterization of advanced detector and electronic devices performed at RBI - Aneliya Karadzhinova-Ferrer (Rudjer Boskovic Institute (HR))

11:00 Discussion on TCT/IBIC techniques
11:20
11:20 - 18:00
Contributions

11:20 Timing resolution on a 3D silicon pixel detector - Dario De Simone (Universitaet Zuerich (CH))

11:40 Simulation and testing results of the low gain avalanche diodes developed by IHEP and IME in China - Mei Zhao (Chinese Academy of Sciences (CN))

12:00 Preliminary test results on LGAD devices - Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB))

12:20 Status of CNM LGAD Runs - Albert Doblas Moreno

12:40 Preliminary USTC-1 LGAD Results and Large Array Characterization for HGTD - Xiao Yang (University of Science and Technology of China (CN))

14:00 A summary of the radiation resistance of carbonated gain implants - Marco Ferrero (Universita del Piemonte Orientale/INFN Torino (IT))

14:20 Characterization of CMS-ETL HPK2 LGAD samples before irradiation - Marcos Fernandez Garcia (Universidad de Cantabria and CSIC (ES))

14:40 LGAD measurements from different producers - Alissa Howard

15:00 Efficiency estimation on irradiated LGAD with respect to sensor stability - Vagelis Gkougkousis (CERN)

15:20 Preliminary results from mortality studies conducted on the LGADs using the ELI fs-laser beam - Gordana Medin (University of Montenegro)

16:00 First results from thin silicon sensors for extreme fluences - Valentina Sola (Universita e INFN Torino (IT))

16:20 Electrical and timing performance of AC-LGADs - Alessandro Tricoli (Brookhaven National Laboratory (US))

16:40 The "1 micron" project - Nicolo Cartiglia (INFN Torino (IT))

17:00 Double Sided LGADs for 5D Measurements - Ronald Lipton (Fermi National Accelerator Lab. (US))

17:20 Discussion on LGADs - Giulio Pellegrini (Universidad de Valencia (ES)) Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)) Ivan Vila (IFCA (CSIC-UC)) Salvador Hidalgo (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
Friday 20 November 2020
09:00 RD50 Beta source measurement systems
RD50 Beta source measurement systems
09:00 - 11:40
Contributions

09:00 Sr90-Beta Setup at CERN SSD: Hardware and Data Analysis - Julian Alexander Boell (Hamburg University (DE))

09:20 JSI charge collection/timing setup - Gregor Kramberger (Jozef Stefan Institute (SI))

09:40 Characterization with a β-source setup of the FBK UFSD 3.2 & HPK2 LGAD productions - Federico Siviero (Universita e INFN Torino (IT))

10:00 Comprehensive mip particle measurement and analyses system - Vagelis Gkougkousis (CERN)

10:20 Coffee Break

10:40 Beta setup in Zurich - Matias Senger (Universitaet Zuerich (CH))

11:00 Discussion on Beta Setup
13:00
13:00 - 17:00
Contributions

13:00 Irradiation study with passive CMOS pixel detector structures on RD50-MPW2 chips - Igor Mandic (Jozef Stefan Institute (SI))

13:20 Radiation tolerant small-pixel passive CMOS sensors with RD53A readout - Yannick Manuel Dieter (University of Bonn (DE))

13:40 Characterization of passive CMOS strip detectors - Jan Cedric Honig (Albert Ludwigs Universitaet Freiburg (DE))

14:00 Active pixel matrix measurements of irradiated RD50 HV-CMOS prototypes - Patrick Sieberer (Austrian Academy of Sciences (AT))

14:30 Inter-pixel resistance measurements of irradiated pixel sensors with different isolation structures - Sinuo Zhang (University of Bonn (DE))

14:50 Proposal: Passive CMOS submission for sensors and test structures - David-Leon Pohl David-Leon Pohl (University of Bonn (DE)) David-Leon Pohl (University of Bonn)

15:00 Discussion: CMOS sensors - Eva Vilella Figueras (University of Liverpool (GB))