3-5 June 2020
Europe/Zurich timezone

DLTS studies on as irradiated PiN diodes of different resistivity

3 Jun 2020, 12:00


Ioana Pintilie (NIMP Bucharest-Magurele, Romania)


We will report on the electrically active defects induced by hadron irradiation in p-type diodes processed on different materials (EPI and CZ) and of different resistivities. The generation of the defects and their electrical parameters (activation energy and capture cross sections) have been investigated by DLTS technique, in the framework of the RD50- Acceptor removal project. The defects' generation rate in different materials after irradiation (with 1MeV neutrons or 23 GeV protons) will be discussed in connection with the Boron content in the samples.

Primary author

Ioana Pintilie (NIMP Bucharest-Magurele, Romania)


Cristina Besleaga Stan (National Institute of Materials Physics) Andrei Nitescu (National Institute of Materials Physics) Lucian Filip (National Institute of Materials Physics) Dan Simion (National Institute of Materials Physics) Andrei Kuncser (National Institute of Materials Physics) Michael Moll (CERN) Yana Gurimskaya (CERN) Eckhart Fretwurst (Hamburg University (DE)) Joern Schwandt (Hamburg University (DE)) Leonid Makarenko (Belarus University)

Presentation materials