Speaker
Prof.
Juozas Vaitkus
(Vilnius University, Institute of Photonics and Nanotechnology)
Description
There are presented the simulation of electron mobility dependence on concentration of different defects (ionized and neutral impurities, dipoles, clusters) according the known models and by TCAD Synopsys program (in the neutron irradiated Si).
The known and new experimental data compared with the simulation results.
Authors
Prof.
Juozas Vaitkus
(Vilnius University, Institute of Photonics and Nanotechnology)
Dr
Algirdas Mekys
(Vilnius University, Institute of Photonics and Nanotechnology)
Dr
Juozas Vysniauskas
(Vilnius University, Institute of Photonics and Nanotechnology)
