3-5 June 2020
Europe/Zurich timezone

Electron mobility dependence on neutron and electron irradiation fluence in Si

3 Jun 2020, 10:20
20m

Speaker

Prof. Juozas Vaitkus (Vilnius University, Institute of Photonics and Nanotechnology)

Description

There are presented the simulation of electron mobility dependence on concentration of different defects (ionized and neutral impurities, dipoles, clusters) according the known models and by TCAD Synopsys program (in the neutron irradiated Si).
The known and new experimental data compared with the simulation results.

Primary authors

Prof. Juozas Vaitkus (Vilnius University, Institute of Photonics and Nanotechnology) Dr Algirdas Mekys (Vilnius University, Institute of Photonics and Nanotechnology) Dr Juozas Vysniauskas (Vilnius University, Institute of Photonics and Nanotechnology)

Presentation materials