3-5 June 2020
Europe/Zurich timezone

Defect characterization in boron doped silicon sensors after exposure to protons, neutrons and electrons

3 Jun 2020, 11:40


Yana Gurimskaya (CERN)


The radiation tolerance of 50 μm thin p-type Si epitaxial (EPI) devices differing in resistivity (initial Boron concentration) has been studied for 24 GeV/ c protons, reactor neutrons and 5.5 MeV electrons in the fluence range between 1E+10 cm^−2 and 1E+15 cm^−2 . The talk will summarize an update on characterisation and identification of the radiation-induced defects with a special focus to Boron-related ones responsible for deterioration of sensor properties. The data have been achieved with the TSC and DLTS techniques in the framework of the RD50 Acceptor Removal Project.

Primary authors

Yana Gurimskaya (CERN) Isidre Mateu (CERN) Anja Himmerlich (CERN) Ioana Pintilie (NIMP Bucharest-Magurele, Romania) Michael Moll (CERN) Eckhart Fretwurst (Hamburg University (DE)) Joern Schwandt (Hamburg University (DE)) Leonid Makarenko (Byelorussian State University (BY))

Presentation materials