This project focuses on the investigation of radiation damage of epitaxial P type silicon.
Various test structures consisting of Schottky diodes and p junctions of different size and flavors are being fabricated at different facilities, including RAL, Carleton University and CNM.
The structures are fabricated on a 6 inch wafer of various doping (1e13, 1e14, 1e15, 1e16, and 1e17 B cm-3) and 50 um thick epitaxial layer.
Updates and details on the initial fabrication phase of devices on high resistivity wafer will be given. Plans for the testing of the devices will also be discussed.
Initial design and simulations of LGAD structures, currently being developed at RAL-Oxford-Birmingham in collaboration with T2eV semiconductor foundry, will also be presented.
Finally, some initial plans for GaN radiation hardness investigation using custom devices from NRC in collaoration with Carleton University will be presented