Author(s)
| Bonanni, Alberta (Institute of Semiconductors and Solid State Physics, Johannes Kepler University, 69 Altenbergerstrasse, 4040 Linz, Austria) ; Adhikari, Rajdeep (Institute of Semiconductors and Solid State Physics, Johannes Kepler University, 69 Altenbergerstrasse, 4040 Linz, Austria) ; Vorhauer, Julia (Institute of Semiconductors and Solid State Physics, Johannes Kepler University, 69 Altenbergerstrasse, 4040 Linz, Austria) ; Ernst, Arthur (Institute of Semiconductors and Solid State Physics, Johannes Kepler University, 69 Altenbergerstrasse, 4040 Linz, Austria) ; Masenda, Hilary (School of Physics, University of the Witwatersrand, South Africa) ; Gunnlaugasson, Haraldur Pall (University of Iceland, Dunhaga 3, IS-107 Reykjavík, Iceland) ; Johnston, Karl (PH Department, ISOLDE/CERN, 1211 Geneva 23, Switzerland) ; Schnell, Juliana (PH Department, ISOLDE/CERN, 1211 Geneva 23, Switzerland) ; Bharauth Ram, Krishanlal (Dept. of Physics, Univ. Kwazulu-Natal, South Africa.) |