6–11 Jun 2021
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America/Toronto timezone
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(G*) Towards the atomic scale readout of single acceptor states in p-doped Si

8 Jun 2021, 15:37
7m
Underline Conference System

Underline Conference System

Oral Competition (Graduate Student) / Compétition orale (Étudiant(e) du 2e ou 3e cycle) Symposium Day (NRC) - Physics for the next generation of sensors and metrology (NRC) TS-7 Sensors and Metrology Symposium (NRC) / Symposium sur les capteurs et la métrologie (CNRC)

Speaker

Max Yuan (University of Alberta)

Description

Single acceptor dopants in Si along with dangling bonds are enabling technologies for atomic scale charge and spin-based devices.1 Additionally, recent advances in hydrogen lithography have enabled the patterning of quantum dot based circuit elements with atomic precision.[2] We engineered a single acceptor coupled to a dangling bond wire on highly doped p-type H-Si(100) and characterized its electronic properties with scanning tunneling spectroscopy. The coupled entity has an electronic structure that behaves as a conductive wire from which the charge state of the dopant can be accessed and has a complex dependence on the dangling bond wire length. In addition, dI/dV mapping reveals features reminiscent of charging rings that are centered over the dopant and overlap with the wire.[3] This overlap varies with electric field and its tunability may augment the functionality of dangling bond based quantum devices.

References:
1 A. Laucht et al., "Roadmap on quantum nanotechnologies", Nanotechnology, vol. 32, no. 16, p. 162003, 2021. Available: 10.1088/1361-6528/abb333
[2] T. Huff et al., "Binary atomic silicon logic", Nature Electronics, vol. 1, no. 12, pp. 636-643, 2018. Available: 10.1038/s41928-018-0180-3
[3] N. Turek, S. Godey, D. Deresmes and T. Mélin, "Ring charging of a single silicon dangling bond imaged by noncontact atomic force microscopy", Physical Review B, vol. 102, no. 23, 2020. Available: 10.1103/physrevb.102.235433

Figure 1. a) (1.8 V 50 pA) STM image of a 7 dangling bond wire fabricated next to a subsurface Boron dopant on highly doped P type H-Si (100) with individual spectroscopy points denoted by arrows.  b) dI/dV spectroscopy taken over the dopant and wire shown in a), exhibiting previously unobserved peaks at -1.4 V and 0.9 V.

Primary author

Max Yuan (University of Alberta)

Co-authors

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