Speaker
Dr
Eugenijus Gaubas
(Vilnius university)
Description
Fluence dependent recombination lifetime in neutron and proton irradiated MCz , FZ and epi-Si structures.
E.Gaubas, J.Vaitkus, T.Ceponis, A.Uleckas, J.Raisanen, S.Vayrynen, and E.Fretwurst
Results of comparative investigation of recombination lifetime in neutron and proton irradiated MCz, FZ and epi-Si structures are presented. Recombination lifetime in neutron and high energy proton irradiated different materials decreases near linearly with fluence enhancement in the range of 1E12 - 3E16 1/cm2. However, absolute lifetime values are significantly decreased in low energy (~2 MeV) proton irradiated structures relatively to those in neutron and high energy protons irradiated material. Cross-sectional lifetime scans within wafer thickness are presented and discussed.
Primary author
Dr
Eugenijus Gaubas
(Vilnius university)
Co-author
Prof.
Juozas Vaitkus
(Vilnius University)
