Prof.
Mara Bruzzi
(INFN and University of Florence),
Michael Moll
(CERN)
12/11/2007, 09:00
Hartmut Sadrozinski
(Santa Cruz Inst. for Particle Phys. (SCIPP) - Univ. of Californi)
12/11/2007, 09:15
Towards the SLHC (invited overview talks)
Marcello Mannelli
(CERN)
12/11/2007, 09:45
Lars Eklund
(Department of Physics and Astronomy)
12/11/2007, 10:45
Towards the SLHC (invited overview talks)
The plans for the upgrade of the LHCb experiment will be presented.
The LHCb experiment plans to upgrade from its nominal instantaneous luminosity of 2x10^32 cm^-2s^-1 to around a factor of ten higher. The key elements of the upgrade will be a displaced vertex trigger at the initial level of triggering and a radiation hard vertex detector.
An overview of the changes required to the full...
Hartmut Sadrozinski
(Santa Cruz Inst. for Particle Phys. (SCIPP) - Univ. of Californi)
12/11/2007, 11:10
Full Detector Systems
We will show data on C-V, I-V, Cint, Rint etc. pre-rad and post rad.
But we will concentrate on charge collection with a beta source and compare neutron irradiated sensors up to 2e15 n/cm^2.
Dr
Gianluigi Casse
(Department of Physics)
12/11/2007, 11:30
Full Detector Systems
Comparison of the charge collection efficiency of 300µm and 140µm thick silicon microstrip detectors after neutron irradiation up to 1x10^16 cm-2.
Dr
Anthony Affolder
(University of Liverpool)
12/11/2007, 11:50
Full Detector Systems
Comparison of the charge collection efficiency as a function of resistivity and annealing times for FZ and MCz p-type silicon microstrip detectors after neutron irradiation up to 3x10^15 cm-2.
Panja-Riina Luukka
(Helsinki Institute of Physics HIP)
12/11/2007, 13:30
Full Detector Systems
The silicon strip detector based beam telescope, the SiBT, was upgraded in spring 2007 using DAQ components from the CMS Tracker module testing and Fermilab D0 RunIIb silicon strip sensors from Hamamatsu. The interpolated position resolution of the telescope is 9 µm, it has a S/N of 25 and an active area of 4 x 4 cm2. The telescope contains 8 reference detector planes in ±45 degree orientation...
Martin Frey
(Institut fuer Experimentelle Kernphysik)
12/11/2007, 13:50
Full Detector Systems
In a beamtest at CERN H2 the behaviour of irradiated and non-irradiated full-size AC-coupled strip detectors made of n-type magnetic Czochralski silicon was investigated. The sensors of the size of 4x4 cm^2, 300µm thickness with 768 strips and 50µm pitch had been produced at the Helsinki Institute of Physics. After the qualification, the sensors were irradiated with fluences between 10^14/cm^2...
Dr
Alberto Messineo
(Univ. + INFN)
12/11/2007, 14:10
Full Detector Systems
Preliminary measurement of CCE on Fz, MCz and Epitaxial micro-strip sensors equipped with CMS F.E. read-out fast electronics.
Dr
Lars Eklund
(University of Glasgow)
12/11/2007, 14:30
Full Detector Systems
We present details of a readout system for strip detectors, using LHCb Beetle chips and TELL1 DAQ. The front-end chip takes analogue samples from each strip at 40MHz. External triggering and time measurement are required to select hits on the sensors.
The system has very recently been used at the ATLAS 3D testbeam, with 3D-STC strips (produced by Trento, tested by Freiburg) and with n-on-p...
Dr
Jaakko Haerkoenen
(Helsinki Institute of Physics HIP)
12/11/2007, 15:50
Defect Engineering and Pad Detector Characterization
N-type MCz-Si pad detectors have been irradiated by 9 MeV and 24 GeV/c protons up to 1x10^16 neff/cm^2 fluence. The samples have been characterized by Transient Current Technique (TCT) operating with 670nm laser and Charge Collection Efficiency (CCE) measurements performed by 1060nm IR laser. Low and high energy proton irradiation results are compared and charge collection of MCz-Si detectors...
Katharina Kaska
(CERN, Technische Universitaet Wien)
12/11/2007, 16:30
Defect Engineering and Pad Detector Characterization
A series of epitaxial detectors of 150 mum thickness produced by different producers (IRST, CNM, HIP) will be compared to each other (CV,IV,CCE) after proton and neutron irradiation.
Jens Weber
(Universität Dortmund)
12/11/2007, 16:50
Defect Engineering and Pad Detector Characterization
Due to the thickness and therefore very short signal length, the classic analysis techniques (ECC, CCM) failed for the determination of trapping times. We presented a method which allows to extracted the trapping time constant without a time resolved signal. The method is a combination of simulation and measuremnt of the charge collection of an irradiated pad detector.
Dr
Elena Verbitskaya
(Ioffe Physico-Technical Institute RAS)
12/11/2007, 17:10
Michael Moll
(CERN)
12/11/2007, 18:00
Several types of silicon wafers (FZ, MCZ, EPI0 have been ordered via RD50 - A brief overview of the status is given.
Oliver Bruning
(CERN)
13/11/2007, 09:00
Li Long
(CIS, Erfurt, Germany)
13/11/2007, 09:30
Li Long and Ralf Röder
CiS Institut of Micro Senors GmbH
99099 Erfurt, Germany
Abstract
After three decades persistent investigation and development, semiconductor irradiation detector has continuously improved its performance and extended its application. A huge amount of researches regarding radiation hardness, detection efficiency, position and time resolution, and noise has been...
Hans-Günther Moser
(Max-Planck-Institut)
13/11/2007, 09:50
3D Detectors and New Structures
Status of the R&D on thin planar detectors:
- Design and layout of test structures.
- Procurement and processing of the SOI-FZ test wafers
- Procurement and processing of the EPI wafers
- Simulations
- Irradiation plans
Gregor Pahn
(Fakultaet fuer Physik - Albert-Ludwigs-Universitaet Freiburg)
13/11/2007, 10:40
3D Detectors and New Structures
A summary will be given on recent Freiburg activities with emphasis on tests of 3D STC detectors. We have tested a module with two Trento-made 3Ds, irradiated up 10^15 Neq.
Mr
David Pennicard
(University of Glasgow)
13/11/2007, 11:00
3D Detectors and New Structures
We present simulations of radiation-damaged 3D detectors, showing how electrode spacing and different device structures affect depletion and charge collection behaviour at 10^16 neq/cm2 damage. The simulation results are compared with existing measurements on planar and 3D sensors.
13/11/2007, 11:20
Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
13/11/2007, 13:30
Defect and Material Characterization
E. Fretwurst for the Wodean collaboration
Universities of Hamburg, Florence, Minsk, Oslo, Vilnius; NIMP Bucharest, CERN-PH, JSI Ljubljana, Kings College London, ITME Warsaw
A short introduction on the WODEAN project will be given, The main object the project is to combine several methods of defect
analysis in a correlated effort for the investigation of radiation induced defects,...
Ioana Pintilie
(NIMP Bucharest)
13/11/2007, 13:50
Defect and Material Characterization
Cluster related defects were investigated by the Thermally Stimulated Current (TSC) method in neutron irradiated n-type Si diodes during 80C annealing. Three hole traps proved to have an electric-field-enhanced emission characteristic for Coulombic wells. Their zero field emission rates were obtained describing the TSC peaks with the three-dimensional Poole Frenkel formalism when accounting...
Ms
Alexandra Junkes
(Institute for Experimental Physics, University of Hamburg)
13/11/2007, 14:10
Defect and Material Characterization
Isothermal annealing studies at 60° C and 300° C were performed on thin FZ, MCz and EPI-DO n-type silicon diodes after irradiation with reactor neutrons. Deep level transient spectroscopy (DLTS) was used to follow the evolution of defect levels while C/V and I/V characteristics were taken to determine the electrical properties (depletion voltage and leakage current) of the detectors. A...
Dr
Leonid Makarenko
(Belarusian State University)
13/11/2007, 14:30
Defect and Material Characterization
It is expected the formation of defect clusters when high-energy Si knock-on atoms are created and cluster effects are likely to be quite important for radiation damage of silicon detectors in LHC experiments. However the understanding of these effects in Si detectors irradiated with different particles is insufficient as compared to the knowledge on the role of isolated point defects.
DLTS...
Prof.
Pawel Kaminski
(Institute of Electronic Materials Technology)
13/11/2007, 15:30
Defect and Material Characterization
High-resolution photoinduced transient spectroscopy (HRPITS) and photoluminescence (PL) measurements have been employed to studying the annealing-induced changes in the defect structure of MCz Si irradiated with the very high fluence of 1-MeV neutrons. The defect centres were studied after three annealing steps: 1h, 80 oC; 1h, 80 oC + 1h, 160 oC and 1h, 80 oC + 1h, 160 oC + 1h, 240 0C. It is...
Dr
Eugenijus Gaubas
(Vilnius university)
13/11/2007, 15:50
Defect and Material Characterization
Fluence dependent recombination lifetime in neutron and proton irradiated MCz , FZ and epi-Si structures.
E.Gaubas, J.Vaitkus, T.Ceponis, A.Uleckas, J.Raisanen, S.Vayrynen, and E.Fretwurst
Results of comparative investigation of recombination lifetime in neutron and proton irradiated MCz, FZ and epi-Si structures are presented. Recombination lifetime in neutron and high energy proton...
Juozas Vaitkus
(Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)
13/11/2007, 16:10
Defect and Material Characterization
It is presented the dependence of the photoconductivity spectra in the irradiated by neutrons with fluence 1e14 - 1e16 cm-2. The deep local levels are identified by Lucovsky model, data about traps obtained from thermally stimulated conductivity and the effects of conductivity via impurity (traps) band - from the temperature dependence of persistant conductivity. The results are discussed...
Prof.
Bruno Sopko
(Czech Technical University (CTU))
13/11/2007, 16:30
Defect and Material Characterization
N-type SI InP material [100] doped with Fe (deep acceptor) was initial substrate for preparation of detectors structures.
P-N junction structures were produced by liquid phase epitaxy technique with Zn and Mg.
Electrical and detection parameters of structures were measured and compared.
