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Description
Low doping electron-electron interactions in monolayer MoS$_2$ lead to a ferromagnetic spin order,whereas larger occupation of spin-polarized energy bands results in paramagnetism. The electron density of MoS$_2$ might be tuned with gate voltage, thus providing the switch ability of the ferromagnetic to paramagnetic first-order phase transition. An abrupt phase transition in two-dimensional semiconductor gated MoS$_2$ monolayer is detected by magnetic force spectroscopy. Spontaneous reproducible changes of the magnetic force were observed at doping concentration equal to n$_𝑐$=3.0×10$^{12}$cm$^{−2}$ and are attributed to first order ferromagnetic to paramagnetic phase change. Linear dependence of force versus external magnetic field was noted in the paramagnetic state, whereas no dependence was found in ferromagnetic state.
