Speaker
Simon Svab
Description
Holes in germanium/silicon core/shell nanowires are a powerful platform to study and optimize properties of spin qubits. This is a consequence of the strong, gate-tunable direct Rashba spin-orbit interaction, arising from strong confinement in the nanowire. So far, experiments in this system have been done in DC transport, preventing single-shot readout.
Here, we show gate-dispersive charge sensing measurements in a Ge/Si nanowire device with a tank circuit on the sample PCB. A strontium titanate ring-varactor is employed to achieve in-situ impedance matching down to 11 mK. We present progress towards depleting the nanowire to fewer holes and establishing fast qubit readout.
Author
Simon Svab
Co-authors
Rafael Eggli
(University of Basel)
Dr
Taras Patlatiuk
(University of Basel)
Mr
Dominique Trüssel
(University of Basel)
Mr
Miguel Carballido
(University of Basel)
Mr
Pierre Chevalier Kwon
(University of Basel)
Simon Geyer
(University of Basel)
Dr
Ang Li
(Department of Applied Physics, Eindhoven University of Technology, The Netherlands)
Prof.
Erik Bakkers
(Department of Applied Physics, Eindhoven University of Technology, The Netherlands)
Andreas Kuhlmann
(University of Basel)
Dominik Zumbühl
(University of Basel)
