Speaker
Description
Ultra-clean germanium/silicon (Ge/Si) core shell nanowires (NWs) have been predicted and proven to host highly stable hole spin qubits, controllable via Rashba spin orbit interaction with a large scalability potential making it possible to develop realistic and reliable quantum computers. To maximise their performance, high quality crystalline NWs grown along ⟨110⟩ direction with well-defined Ge/Si interfaces are needed.
We develop ultra clean Ge/Si heterostructures by chemical vapour deposition (CVD) using the vapour liquid solid (VLS) techniques. We have achieved the growth of crystalline Ge/Si core shell NWs, using a low temperature plasma enhanced shell growth. In addition CVD deposition kinetics and crystalline quality were investigated.
