Joint Annual Meeting of the Swiss and Austrian Physical Society 2023

【826】Strain Analysis in Ge Quantum Well by GPA and Raman techniques

8 Sept 2023, 13:15

15m

Room 116

Talk Quantum Computing (by NCCR SPIN) Quantum Computing

Speaker

Alicia Ruiz

Description

Silicon with its long coherence time of spins of localized electrons is a candidate for quantum information processing . Among quantum materials compatible with Si there is germanium (Ge), which has however a 4.2% mismatch. Such a mismatch introduces strains in Si/Ge heterostructures hindering mobility. Thus, scattering must be minimized by diminishing strains. Interestingly, electron and hole qubits can be created in Si and Ge, respectively .
In this work, we grew Ge quantum wells (QWs) embedded in Si/Ge heterostructures. First, we localized the Ge-QW using energy-dispersive X-ray (EDX) spectroscopy. Finally, we studied the local strain in the Ge-QW by Raman spectroscopy and geometric phase analysis (GPA).