Speaker
Rafael Eggli
(University of Basel)
Description
By leveraging industrial CMOS manufacturing processes, spin qubits in silicon are a promising approach to achieving scalable quantum computing. While electron spin qubits have reached many milestones, hole spins in silicon present an exciting new platform, allowing for fast, all-electrical qubit control, absence of valleys and low susceptibility to hyperfine noise. Here, we present recent progress on hole spin qubits in fin field-effect transistors, which is an industry-standard transistor technology. We demonstrate single and two-qubit gate operations and explore hole-spin physics in the presence of strong spin-orbit interaction. Furthermore, we investigate the prospects for scalable readout and high temperature operation.
Author
Rafael Eggli
(University of Basel)
Co-authors
Dr
Andreas Fuhrer
(IBM Research - Zürich, Rüschlikon, Switzerland)
Dr
Andreas Kuhlmann
(University of Basel)
Mr
Carlos dos Santos
(University of Basel; Université Grenoble Alpes, Grenoble, France)
Prof.
Dominik Zumbühl
(University of Basel)
Mr
Eoin Kelly
(IBM Research - Zürich, Rüschlikon, Switzerland)
Dr
Gian Salis
(IBM Research - Zürich, Rüschlikon, Switzerland)
Dr
Leon Camenzind
(University of Basel; RIKEN Center for emergent matter science, Tokyo, Japan)
Prof.
Richard Warburton
(University of Basel)
Mr
Simon Geyer
(University of Basel)
Mr
Toni Berger
(University of Basel)
