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The realization of highly stable, controllable, and accessible hole spin qubits is strongly dependent on the quality of the materials hosting them. Ultra-clean germanium/silicon-germanium heterostructures in quantum wells (QWs) are the perfect candidates. Due to their large scalability potential, they pave the way towards the development of realistic and reliable solid state, all-electric quantum computers.
The use of chemical vapor deposition (CVD) allows the epitaxial growth at elevated rates of thin films with high structural quality.
This work shows the results relative to the growth of epitaxial Ge/Si1−x Gex heterostructures for QW-based qubits, using a reverse grading approach. The CVD deposition kinetics and crystalline quality of the materials were investigated.