【205】Exploring the surface atomic and electronic structure of the multiferroic Rashba semiconductor Ge1-xMnxTe

6 Sept 2023, 18:15
15m
Room 114

Room 114

Talk Surfaces, Interfaces and Thin Films Surfaces, Interfaces and Thin Films

Speaker

Martin Heinrich (Paul Scherrer Institute)

Description

GeTe is a IV-VI semiconductor compound with existing applications in optoelectronics and thermoelectrics. In addition to ferroelectricity and a large Rashba spin splitting in GeTe, doping with Mn atoms introduces ferromagnetism, which makes Ge1-xMnxTe a magnetoelectric multiferroic with coupled electric and magnetic polarization and a promising candidate for spintronic applications.
In this project, we use synchrotron based photoelectron diffraction (XPD, PhD) and spectroscopy (XPS, ARPES) and scanning tunneling microscopy (STM, STS) to gain a detailed understanding of its surface atomic and electronic structure and the inherent multiferroic couplings.

Author

Martin Heinrich (Paul Scherrer Institute)

Co-authors

Gunther Springholz (Institut für Halbleiter-und Festkörperphysik, Johannes Kepler Universität, Linz, Austria) Juraj Krempasky (Photon Science Division, Paul Scherrer Institut, Villigen, Switzerland) Dr Matthias Muntwiler (Paul Scherrer Institute)

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