Speaker
Joel Rehmann
(ETH Zürich)
Description
For the first time we demonstrate an ultrafast scanning electron (USEM) microscope with electron-beam-induced current (EBIC) capability. This novel technique allows for in-situ observation of depletion layers in fast semiconductor devices. We demonstrate micrometer spatial and picosecond temporal resolution on an avalanche photodiode. EBIC is a well established method in semiconductor analysis. Paired with a pump probe approach in a USEM the method provides a new tool for developing milimeter-wave electronics.
Primary author
Joel Rehmann
(ETH Zürich)
Co-authors
Matthias Röllin
(ETH Zürich)
Nikolaus von Schickh
(ETH Zürich)
Francisco Carrion Ruiz
(ETH Zürich)
Andreas Vaterlaus
(ETH Zürich)
Yves Marc Acremann
(ETHZ - ETH Zurich)
