Speaker
Description
Vertical-emitting, optically pumped semiconductor lasers (OPSL) are known for their high-power performance and excellent beam quality, primarily developed using the GaAs material system which restricts emission to the near-infrared. Our research focuses on extending OPSL into the short-wave-infrared (SWIR) region by employing the GaSb material system through molecular beam epitaxy. We achieved significant advancements in continuous wave operation through enhanced backside-cooling, refined gain characterization, and the first GaSb-based membrane-external cavity surface emitting laser. Additionally, we investigated SESAM modelocked emitters, integrated gain and absorber on single chips, and demonstrated dual-comb operation through spatial multiplexing. These developments mark substantial progress in the field of OPSL, expanding their utility in broader spectral applications.
