Name: 21st RD50 Workshop (CERN)
Start: 2012-11-14T09:00:00+01:00
End: 2012-11-16T13:00:00+01:00
Location: CERN

21st RD50 Workshop (CERN)

from Wednesday 14 November 2012 (09:00) to Friday 16 November 2012 (13:00)

Monday 12 November 2012
Tuesday 13 November 2012
Wednesday 14 November 2012
09:00
09:00 - 12:10
Contributions

09:00 Workshop opening - Michael Moll (CERN) Stephen Gibson (CERN)

09:15 Radiation damage effects to the CMS Silicon Tracker - Seth Zenz (Princeton University (US))

09:40 ATLAS Pixel Detector radiation damage monitoring with the High Voltage delivery system - Rui Wang (University of New Mexico (US))

10:00 Charge Trapping in the Simulation of ATLAS Semi-Conductor Tracker - Marco Filipuzzi (Deutsches Elektronen-Synchrotron (DE))

10:20 Radiation damage effects in the LHCb Vertex Locator - Jon Harrison (University of Manchester (GB))

11:10 CMS Preshower - Anna Elliott-Peisert (CERN)

11:30 Observation of type-inversion in the innermost tracking layer of the ATLAS Pixel Detector - Andre Lukas Schorlemmer (CERN / Georg-August-Universitaet Goettingen (DE)) Stephen Gibson (CERN)

11:50 Multi-Project Wafer (MPW) Runs of Full Custom Pitch Adapters - Miguel Ullan Comes (Universidad de Valencia (ES))
12:10 Lunch
Lunch
12:10 - 13:30
13:30
13:30 - 14:00
Contributions

13:30 Silicon: survival of the fittest - Erik Heijne (Czech Technical University (CZ))
14:00
14:00 - 17:50
Contributions

14:00 Electronic properties of vacancy aggregates in n-type silicon for particle detectors - Pawel Kaminski (Institute of Electronic Materials Technology)

14:20 Radiation damage in n-type silicon after electron irradiation with energies between 1.5 MeV and 15 MeV - Roxana Radu (Institute for Experimental Physics, Hamburg University)

14:40 RADIATION DEFECT TRANSFORMATIONS UNDER ANNEALING OF P-TYPE SILICON - Leonid Makarenko (Belarusian state University)

15:00 Evolution of pulsed current and of carrier lifetime characteristics in Si structures during 25 MeV neutrons irradiation using a spallator type source - Eugenijus Gaubas (Vilnius University)

15:20 The free carrier transport properties in proton and neutron irradiated Si(Ge) - Juozas Vaitkus (Vilnius University)

16:10 Charge carrier detrapping in irradiated silicon sensors after microsecond laser pulses - Markus Gabrysch (CERN)

16:30 Measurements on 800 MeV proton irradiated diodes (moved to Thursday morning!) - Alexandra Junkes (Brown University)

16:50 MOS Capacitor Displacement Damage Dose (DDD) Dosimeter - Fco.Rogelio Palomo Pinto (University of Sevilla, School of Engineering)

17:10 New proton irradiation facility in Ankara - Bilge Demirkoz (Middle East Technical University (TR))

17:20 Discussion Session: Materials and Defects - Michael Moll (CERN)
17:50

17:50 - 19:40
Thursday 15 November 2012
09:00
09:00 - 15:30
Contributions

09:00 Irradiation study on diodes of different silicon materials for the CMS tracker upgrade - Joachim Erfle (Hamburg University (DE))

09:15 Impact of proton irradiations on the electrical properties of n-type Si-diodes - Coralie Neubüser (Úniversity of Hamburg)

09:30 Measurements on 800 MeV proton irradiated diodes (moved from Wednesday!) - Alexandra Junkes (Brown University)

09:40 First investigation of silicon microstrips for the CMS tracker upgrade using edge-TCT - Marcos Fernandez Garcia (Universidad de Cantabria (ES))

10:00 Temperature dependence of the bulk current in Si - Alexandre Chilingarov (Lancaster University (GB))

10:20 Charge collection studies on heavily irradiated diodes from the RD50 multiplication run (an update) - Gregor Kramberger (Jozef Stefan Institute (SI))

11:10 Annealing of Heavy Irradiated n-on-p Diodes at Temperatures 20°, 40°, 60° and 80°C - Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))

11:30 TCT measurements with irradiated strip detectors - Igor Mandic (Jozef Stefan Institute (SI))

11:50 Electrical characterisation of heavily irradiated microstrip sensors - Alexandre Chilingarov (Lancaster University, UK)

12:10 Simulation of irradiated silicon p-bulk sensors - Marco Bomben (Univ. P. et Marie Curie (Paris VI) (FR))

12:30 Simulation of electric field profile in Si irradiated detectors with a consideration of carrier generation parameters - Elena Verbitskaya (Ioffe Physical-Technical Institute of Russian Academy of Sciences)

14:00 Simulation of an effective 2-trap radiation damage model - Robert Eber (IEKP - KIT)

14:20 Double Electric field Peak Simulation of Irradiated Detectors Using TCAD tools - Ashutosh Bhardwaj (University of Delhi (IN))

14:40 Simulation of Double Junction using Synopsys TCAD - Michael Moll (CERN)

15:00 Discussion on Detector Characterization and Simulations - Eckhart Fretwurst (II. Institut fuer Experimentalphysik) Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)
15:30
15:30 - 19:20
Contributions

16:00 A Portable Telescope Based on the Alibava System for Test Beam Studies - Manuel Lozano Fantoba (Universidad de Valencia (ES))

16:20 Update on thin sensors results (will be shown on Friday afternoon in PPS meeting) - Gianluigi Casse (Uniof Liverpool)

16:35 Charge Collection measurements of n-in-p strip detectors after mixed irradiation to HL-LHC fluences and annealing - Susanne Kuehn (Albert-Ludwigs-Universitaet Freiburg (DE))

16:55 Bias effects in highly irradiated n+-p silicon microstrip detectors after long term annealing - Marko Milovanovic (Jozef Stefan Institute, Ljubljana)

17:15 A Charge Collection Study with Dedicated RD50 Charge Multiplication Sensors - Christopher Betancourt (Freiburg University)

17:35 Investigation of Charge Multiplication in Silicon Strip Sensors - Robert Eber (KIT - Karlsruhe Institute of Technology (DE))

17:50 Status of the RD50 funding request for "detectors with enhanced multiplication" - Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM_CSIC))

18:10 Punch through protection of heavily irradiated ATLAS07 mini-sensors. - Jan Bohm (Inst.of Physics AS CR)

18:30 Discussion on Full Detector Systems - Gregor Kramberger (Jozef Stefan Institute (SI))
19:20

19:20 - 23:59
Friday 16 November 2012
09:00
09:00 - 12:40
Contributions

09:00 Non uniform irradaition of CNM 3D sensors for AFP - Andrea Micelli (IFAE Barcelona)

09:20 Scribe-Cleave-Passivate (SCP) Slim Edge Technology for Silicon Sensors - Vitaliy Fadeyev (University of California,Santa Cruz (US))

09:40 Progress on the Low Resistance Strip Sensors and Slim Edges Combined RD50 Experiment - Victor Hugo Benitez Casma (Universidad de Valencia (ES))

10:00 Characterization of thin high irradiated n-in-p planar pixel sensor - Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

10:20 Characterization of active edge planar pixels produced at VTT - Anna Macchiolo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

11:10 First experience with radiation-hard active sensors in 180 nm HV CMOS technology - Daniel Muenstermann (CERN)

11:30 Study of the behaviours of silicon sensor structures, before and after irradiation - Yoshinobu Unno (High Energy Accelerator Research Organization (JP))

11:50 The Birmingham Irradiation Facility - Richard French (The University of Sheffield)

12:10 RD50 - New structures discussion session - Giulio Pellegrini (Universidad de Valencia (ES))