9th “Trento” Workshop on Advanced Silicon Radiation Detectors <br>(3D and p-type Technologies)

Session

Active edge / Charge multiplication

27 Feb 2014, 14:00

Genova - Italy

Conveners

Active edge / Charge multiplication

• Yoshinobu Unno (High Energy Accelerator Research Organization (JP))
• Gian-Franco Dalla Betta (INFN and University of Trento)

52. Performance Of Thin Edgeless N-on-p Planar Pixel Sensors for ATLAS Upgrades

Maurizio Boscardin (FBK Trento)

27/02/2014, 14:20

54. Thin Edgeless Pixel Sensors on Epitaxial Wafers After Irradiation

Gabriele Giacomini (Fondazione Bruno Kessler)

27/02/2014, 14:40

57. Simulation of reduced edge planar pixel sensor for the High Luminosity LHC

Vagelis Gkougkousis (Universite de Paris-Sud 11 (FR))

27/02/2014, 15:00

58. A study of charge multiplication in silicon strip detectors

Riccardo Mori (Albert-Ludwigs-Universitaet Freiburg (DE))

27/02/2014, 15:20

55. Investigation of LGAD for Ultra-Fast Silicon Detectors

Hartmut Sadrozinski (SCIPP, UC santa Cruz)

27/02/2014, 16:30

59. Simulation of Ultra-Fast Silicon Detectors

Francesca Cenna (Universita e INFN (IT))

27/02/2014, 16:50

60. Latest measurements of LGAD diodes fabricated at IMB-CNM

Virginia Greco (I)

27/02/2014, 17:10

56. First measurements of new p-type strip and pad detectors with LGAD in epitaxial wafers

Marta Baselga Bacardit (Universidad de Valencia (ES))

27/02/2014, 17:30

61. Radiation hardness of Low Gain Amplification Diodes (LGAD)

Gregor Kramberger (Jozef Stefan Institute (SI))

27/02/2014, 17:50

62. Timing properties of Ultra-Fast Silicon Detector

Nicolo Cartiglia (Universita e INFN (IT))

27/02/2014, 18:10