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11:25
DC bias effects in CV measurements
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Alexander Chilingarov
(Lancaster University, UK)
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11:45
Effect of bias voltage on full depletion voltage measured for different materials
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Gregor Kramberger
(Jozef Stefan Institute)
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13:30
Neutron irradiation effects in epitaxial silicon detectors
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Vladimir Khomenkov
(INFN)
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13:50
Recent results of measurements performed on irradiated epitaxial and MCz silicon devices of the SMART Collaboration
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Anna Macchiolo
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14:10
Homogeneity and thermal donors in p-type MCz-Si detector materials
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Panja Luukka
(Helsinki)
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14:30
CCE and CV/IV measurements and annealing studies with irradiated p-type MCz diodes
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Herbert Hoedlmoser
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14:50
Charge collection in p- and n-type MCz Si microstrip and single pad SMART detectors irradiated with 26MeV protons
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Monica Scaringella
(INFN, University of Florence)
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15:40
Modeling Radiation Damage Effects in Oxygenated Silicon Detectors
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Marco Petasecca
(University of Perugia - DIEI)
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16:00
Electric field distribution in irradiated MCZ Si detectors
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Elena Verbitskaya
(Ioffe)
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16:20
Recent results on electric field distribution in SMART irradiated detectors on MCZ and epitaxial silicon
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Vladimir Eremin
(Ioffe)
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16:40
Measurements of Lorentz angle in irradiated silicon strip sensors
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Michael Krause
(University of Karlsruhe)
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17:00
Discussion Session (Pad Detector Characterization & Material Engineering)
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Eckhart Fretwurst
Gregor Kramberger