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    9th RD50 Workshop

    16–18 Oct 2006
    CERN
    Europe/Zurich timezone

    Session

    Pad Detector Characterization & Material Engineering

    3
    16 Oct 2006, 11:25
    40-SS-C01 (CERN)

    40-SS-C01

    CERN

    Presentation materials

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    1. 6. DC bias effects in CV measurements
      Alexander Chilingarov (Lancaster University, UK)
      16/10/2006, 11:25
      A.Chilingarov, D.Campbell Lancaster University, UK
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    2. 7. Effect of bias voltage on full depletion voltage measured for different materials
      Gregor Kramberger (Jozef Stefan Institute)
      16/10/2006, 11:45
      G.Kramberger, V. Cindro, I. Mandić, M. Mikuž Jožef Stefan Institute, Ljubljana, Slovenia
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    3. 9. Neutron irradiation effects in epitaxial silicon detectors
      Vladimir Khomenkov (INFN)
      16/10/2006, 13:30
      V. Khomenkov(*), D.Bisello(*), A. Candelori(*), V. Cindro (**), A. Litovchenko(*), D. Pantano(*) (*) INFN Padua Section and University of Padua, Italy (**) Jožef Stefan Institute, Ljubjana, Slovenia
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    4. 23. Recent results of measurements performed on irradiated epitaxial and MCz silicon devices of the SMART Collaboration
      Anna Macchiolo
      16/10/2006, 13:50
      M. Boscardin, L. Borrello, M. Bruzzi, D. Creanza, G.F. Dalla Betta, V. Eremin, A. Macchiolo, N. Manna, D. Menichelli, A. Messineo, C. Piemonte, V. Radicci, M. Scaringella, C. Tosi, E. Verbitskaya, N. Zorzi
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    5. 10. Homogeneity and thermal donors in p-type MCz-Si detector materials
      Panja Luukka (Helsinki)
      16/10/2006, 14:10
      Panja Luukka et al. Helsinki Institute of Physics
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    6. 11. CCE and CV/IV measurements and annealing studies with irradiated p-type MCz diodes
      Herbert Hoedlmoser
      16/10/2006, 14:30
      H. Hoedlmoser, M. Moll, M. Koehler, H. Nordlund CERN, University Siegen, Helsinki Institute of Physics
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    7. 12. Charge collection in p- and n-type MCz Si microstrip and single pad SMART detectors irradiated with 26MeV protons
      Monica Scaringella (INFN, University of Florence)
      16/10/2006, 14:50
      Monica Scaringella, Carlo Tosi, Anna Macchiolo, David Menichelli, Mara Bruzzi, H. F. W. Sadrozinski, M. K. Petterson, C. Betancourt, A. Messineo, L. Borrello, N. Manna, D. Creanza INFN Florence, University of Florence, SCIPP, INFN Pisa, University of Bari
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    8. 25. Modeling Radiation Damage Effects in Oxygenated Silicon Detectors
      Marco Petasecca (University of Perugia - DIEI)
      16/10/2006, 15:40
      M. Petasecca (1,2), G. Caprai (1), G.U. Pignatel (1,2), D. Passeri (1,2) (1) University of Perugia, via G.Duranti 93 - 06125 Perugia ITALY (2) INFN sez. Perugia, via Pascoli 10 – 06120 Perugia ITALY
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    9. 26. Electric field distribution in irradiated MCZ Si detectors
      Elena Verbitskaya (Ioffe)
      16/10/2006, 16:00
      E. Verbitskaya et al.
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    10. 27. Recent results on electric field distribution in SMART irradiated detectors on MCZ and epitaxial silicon
      Vladimir Eremin (Ioffe)
      16/10/2006, 16:20
      V. Eremin et al.
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    11. 17. Measurements of Lorentz angle in irradiated silicon strip sensors
      Michael Krause (University of Karlsruhe)
      16/10/2006, 16:40
      J. Bol, W. de Boer, A. Furgeri, F. Hauler, M. Krause, S. Mueller, S. Reinhardt, A. Sabellek Institut für Experimentelle Kernphysik, University of Karlsruhe
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    12. 8. Discussion Session (Pad Detector Characterization & Material Engineering)
      Eckhart Fretwurst, Gregor Kramberger
      16/10/2006, 17:00
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