9th RD50 Workshop

from Monday 16 October 2006 (08:00) to Wednesday 18 October 2006 (18:00)
CERN (40-SS-C01)

        : Sessions
    /     : Talks
        : Breaks
16 Oct 2006
17 Oct 2006
18 Oct 2006
AM
09:30
Workshop Welcome (until 09:45)
09:30 Introduction - Mara Bruzzi Michael Moll  
Slides
09:45
Defect and Material Characterization & New Materials (until 11:25)
09:45 Results of the simultaneous investigation of the microwave probed photoconductivity and current transients in proton irradiated FZ Si pad detectors - Eugenijus Gaubas (Vilnius)  
Slides
10:05 Recent results on CdZnTe and SiGe devices - Arie Ruzin (Tel Aviv University)  
Abstract
10:25 --- Coffee Break ---
10:55 Discussion Session (Defect and Material Characterization & New Materials)  
Slides
11:25
Pad Detector Characterization & Material Engineering (until 17:30)
11:25 DC bias effects in CV measurements - Alexander Chilingarov (Lancaster University, UK)  
Abstract
Slides
11:45 Effect of bias voltage on full depletion voltage measured for different materials - Gregor Kramberger (Jozef Stefan Institute)  
Abstract
Slides
12:05 --- Lunch break ---
13:30 Neutron irradiation effects in epitaxial silicon detectors - Vladimir Khomenkov (INFN)  
Abstract
Slides
13:50 Recent results of measurements performed on irradiated epitaxial and MCz silicon devices of the SMART Collaboration - Anna Macchiolo  
Slides
14:10 Homogeneity and thermal donors in p-type MCz-Si detector materials - Panja Luukka (Helsinki)  
Slides
14:30 CCE and CV/IV measurements and annealing studies with irradiated p-type MCz diodes - Herbert Hoedlmoser  
Abstract
Slides
14:50 Charge collection in p- and n-type MCz Si microstrip and single pad SMART detectors irradiated with 26MeV protons - Monica Scaringella (INFN, University of Florence)  
Slides
15:10 --- Coffee Break ---
15:40 Modeling Radiation Damage Effects in Oxygenated Silicon Detectors - Marco Petasecca (University of Perugia - DIEI)  
Abstract
Slides
16:00 Electric field distribution in irradiated MCZ Si detectors - Elena Verbitskaya (Ioffe)  
Slides
16:20 Recent results on electric field distribution in SMART irradiated detectors on MCZ and epitaxial silicon - Vladimir Eremin (Ioffe)  
Slides
16:40 Measurements of Lorentz angle in irradiated silicon strip sensors - Michael Krause (University of Karlsruhe)  
Abstract
Slides
17:00 Discussion Session (Pad Detector Characterization & Material Engineering) - Eckhart Fretwurst Gregor Kramberger  
Slides
09:00
3D Detectors & New Structures (until 10:10)
09:00 Update of 3D activity at ITC-irst - Maurizio Boscardin (ITC-irst)  
Abstract
Slides
09:20 Characterisation of a 3D-stc p-type prototype module read out with ATLAS SCT electronics - Simon Eckert (University of Freiburg)  
Abstract
Slides
09:40 Discussion Session (3D detectors and New Structures)  
10:10
Full Detector Systems (until 14:20)
10:10 --- coffee break ---
10:40 Absolute charge measurements using laser setup. - Peter Kodys (Prague)  
Slides
11:00 Negative charge measurements with ATLAS SCT readout HW and SW. - Peter Kodys (Charles University, Prague)  
Slides
11:20 Annealing of TID radiation effects in SMART SSD, MOS and Capacitance test structures - Hartmut Sadrozinski (SCIPP)  
Slides
11:40 Gamma and Neutron Radiation Hardness Tests on 3 different SiGe IHP Technologies for S-LHC - Sergio Díez (CNM - Barcelona)  
Slides
12:00 Charge collection of p-type detectors irradiated with neutrons - Carlos Lacasta (IFIC)  
Slides
12:20 Discussion Session (Full Detector Systems) - Gian Casse (Liverpool University)  
12:50 --- Lunch break ---
09:00 Visit to ATLAS experiment  
PM
18:00
Collaboration Board Meeting (until 19:00)
18:00 Collaboration Board Meeting  
19:00
Workshop Dinner (until 23:00)