09:30
|
Workshop Welcome
(until 09:45)
(40-SS-C01)
|
09:30
|
Introduction
-
Mara Bruzzi
Michael Moll
(40-SS-C01)
|
09:45
|
Defect and Material Characterization & New Materials
(until 11:25)
(40-SS-C01)
|
09:45
|
Results of the simultaneous investigation of the microwave probed photoconductivity and current transients in proton irradiated FZ Si pad detectors
-
Eugenijus Gaubas
(Vilnius)
(40-SS-C01)
|
10:05
|
Recent results on CdZnTe and SiGe devices
-
Arie Ruzin
(Tel Aviv University)
(40-SS-C01)
|
10:25
|
--- Coffee Break ---
|
10:55
|
Discussion Session (Defect and Material Characterization & New Materials)
(40-SS-C01)
|
11:25
|
Pad Detector Characterization & Material Engineering
(until 17:30)
(40-SS-C01)
|
11:25
|
DC bias effects in CV measurements
-
Alexander Chilingarov
(Lancaster University, UK)
(40-SS-C01)
|
11:45
|
Effect of bias voltage on full depletion voltage measured for different materials
-
Gregor Kramberger
(Jozef Stefan Institute)
(40-SS-C01)
|
12:05
|
--- Lunch break ---
|
13:30
|
Neutron irradiation effects in epitaxial silicon detectors
-
Vladimir Khomenkov
(INFN)
(40-SS-C01)
|
13:50
|
Recent results of measurements performed on irradiated epitaxial and MCz silicon devices of the SMART Collaboration
-
Anna Macchiolo
(40-SS-C01)
|
14:10
|
Homogeneity and thermal donors in p-type MCz-Si detector materials
-
Panja Luukka
(Helsinki)
(40-SS-C01)
|
14:30
|
CCE and CV/IV measurements and annealing studies with irradiated p-type MCz diodes
-
Herbert Hoedlmoser
(40-SS-C01)
|
14:50
|
Charge collection in p- and n-type MCz Si microstrip and single pad SMART detectors irradiated with 26MeV protons
-
Monica Scaringella
(INFN, University of Florence)
(40-SS-C01)
|
15:10
|
--- Coffee Break ---
|
15:40
|
Modeling Radiation Damage Effects in Oxygenated Silicon Detectors
-
Marco Petasecca
(University of Perugia - DIEI)
(40-SS-C01)
|
16:00
|
Electric field distribution in irradiated MCZ Si detectors
-
Elena Verbitskaya
(Ioffe)
(40-SS-C01)
|
16:20
|
Recent results on electric field distribution in SMART irradiated detectors on MCZ and epitaxial silicon
-
Vladimir Eremin
(Ioffe)
(40-SS-C01)
|
16:40
|
Measurements of Lorentz angle in irradiated silicon strip sensors
-
Michael Krause
(University of Karlsruhe)
(40-SS-C01)
|
17:00
|
Discussion Session (Pad Detector Characterization & Material Engineering)
-
Eckhart Fretwurst
Gregor Kramberger
(40-SS-C01)
|