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11:25
DC bias effects in CV measurements
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Alexander Chilingarov
(Lancaster University, UK)
-
11:45
Effect of bias voltage on full depletion voltage measured for different materials
-
Gregor Kramberger
(Jozef Stefan Institute)
-
13:30
Neutron irradiation effects in epitaxial silicon detectors
-
Vladimir Khomenkov
(INFN)
-
13:50
Recent results of measurements performed on irradiated epitaxial and MCz silicon devices of the SMART Collaboration
-
Anna Macchiolo
-
14:10
Homogeneity and thermal donors in p-type MCz-Si detector materials
-
Panja Luukka
(Helsinki)
-
14:30
CCE and CV/IV measurements and annealing studies with irradiated p-type MCz diodes
-
Herbert Hoedlmoser
-
14:50
Charge collection in p- and n-type MCz Si microstrip and single pad SMART detectors irradiated with 26MeV protons
-
Monica Scaringella
(INFN, University of Florence)
-
15:40
Modeling Radiation Damage Effects in Oxygenated Silicon Detectors
-
Marco Petasecca
(University of Perugia - DIEI)
-
16:00
Electric field distribution in irradiated MCZ Si detectors
-
Elena Verbitskaya
(Ioffe)
-
16:20
Recent results on electric field distribution in SMART irradiated detectors on MCZ and epitaxial silicon
-
Vladimir Eremin
(Ioffe)
-
16:40
Measurements of Lorentz angle in irradiated silicon strip sensors
-
Michael Krause
(University of Karlsruhe)
-
17:00
Discussion Session (Pad Detector Characterization & Material Engineering)
-
Eckhart Fretwurst
Gregor Kramberger
