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10th RD50 Workshop

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Vilnius, Lithuania

Vilnius, Lithuania
Michael Moll (CERN)
Description
10th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders ( Workshop Homepage )
  • Monday, 4 June
    • 09:00 → 09:20
      Workshop Welcome
      • 09:00
        Welcome 10m
        Speaker: Juozas Vaitkus (Vilnius University)
      • 09:10
        Introduction 10m
        Speaker: Michael Moll
        Slides
    • 09:20 → 13:50
      Defect and Material Characterization & New Materials
      • 09:20
        The WODEAN project - outline and present status 30m
        G. Lindstroem for the WODEAN collaboration (see memberlist given in the talk) Universities of Hamburg, Florence, Minsk, Oslo, Vilnius; NIMP Bucharest, CERN-PH, JSI Ljubljana, Kings College London, ITME Warsaw
        Speaker: Gunnar Lindstroem (Hamburg University)
        Abstract
        Slides
      • 09:50
        Analyze of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects. 20m
        J.Vaitkus, A.Mekys, J.Storasta et al Vilnius University, Institute of Materials Science and Applied Research and ?
        Speaker: A. Mekys
        Slides
      • 10:10
        Investigation of kinetics of complex defects formation during thermal treatment of neutron irradiation silicon using Fourier transform infrared absorption spectroscopy 20m
        Hancza Barbara Surma Institute of Electronic Materials Technology, 01-919 Warszawa, ul. Wólczynska 133, Poland
        Speaker: Barbara Surma (ITME)
        Slides
      • 10:30
        INTERACTION OF INTRINSIC DEFECTS WITH OXYGEN IN NEUTRON-IRRADIATED MCZ-SI: An Infrared Absorption Study 20m
        Leonid I. Murin 1,2 and Bengt G. Svensson 2 1 Joint Institute of Solid State and Semiconductor Physics, Minsk, Belarus 2 Oslo University, Centre for Materials Science and Nanotechnology, Oslo, Norway
        Speaker: Leonid Murin
        Slides
      • 10:50
        Coffee Break 30m Vilnius, Lithuania

        Vilnius, Lithuania
      • 11:20
        Photoluminescence characterisation of the WODEAN samples 20m
        Kriteshwar Kohli, Gordon Davies, King’s College London
        Speaker: Gordon Davies
        Slides
      • 11:40
        Investigation of fluence–dependent lifetime variations in proton and neutron highly irradiated Si 20m
        E.Gaubas, A.Kadys, A.Uleckas, J.Vaitkus Vilnius University Institute of Materials Science and Applied Research
        Speaker: Eugenius Gaubas
        Slides
      • 12:00
        Radiation-induced structure modification in monocrystalline silicon under high-energy ion irradiation 20m
        A.A. Aleev, Yu.V. Polovinkina, M.A. Kozodaev, O.N. Makeev, S.V. Rogozhkin, A.G. Zaluzhnyi State Scientific Center of Russian Federation, Institute for Theoretical and Experimental Physics, Moscow, Russia
        Speaker: Andrey Aleev (SSC RF ITEP)
        Abstract
        Slides
      • 12:20
        Discussion Session (Defect and Material Characterization & New Materials) 30m
        Speaker: Bengt Svensson
      • 12:50
        Lunch break 1h CERN

        CERN
    • 13:50 → 18:40
      Pad Detector Characterization & Material Engineering
      • 13:50
        Comparison of neutron damage in thin FZ, MCz and epitaxial silicon detectors 20m
        E. Fretwurst (a), L. Andricek (b), F. Hönniger (a), K. Koch (a), G. Kramberger (c), G. Lindström (a), H.G. Moser (b), I. Pintilie (a,d), R. Richter (b), R. Röder (e) (a) University of Hamburg, (b) MPI-Semiconductor Laboratory Munich, (c) J. Stefan Institute Ljubljana, (d) NIMP Bucharest, (e) CiS Institute for Microsensoric Erfurt
        Speaker: Eckhart Fretwurst
        Abstract
        Slides
      • 14:10
        Epitaxial silicon detectors irradiated with 23 GeV protons 20m
        H. Hoedlmoser (a), M. Moll (a), J. Haerkoenen (b), K.Kaska (a), M. Kronberger (a) , J. Trummer (a), P. Rodeghiero (c) (a) CERN, Switzerland; (b) Helsinki Institute of Physics, Finland; (c) Universite Catholique de Louvain
        Speaker: Michael Moll (CERN)
        Abstract
        Slides
      • 14:30
        p-type Silicon irradiated with 24 GeV/c protons 20m
        Vladimir Cindro, Gregor Kramberger, Igor Mandić, Marko Mikuž, Marko Zavrtanik; Jožef Stefan Institute and University of Ljubljana
        Speaker: Vlado Cindro (JSI, Ljubljana, Slovenia)
        Abstract
        Slides
      • 14:50
        Space charge sign inversion and electric field reconstruction in 24 GeV proton irradiated MCZ Si p+/n(TD)/n+ detectors processed via thermal donor introduction 20m
        Zheng Li, E. Verbitskaya1, V. Eremin, J. Härkönen Brookhaven National Laboratory, Upton, NY 11973-5000 Ioffe Physico-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia Helsinki Institute of Physics, CERN/PH, 1211 Geneva, Switzerland
        Speaker: Jaakko Härkönen (Helsinki Institute of Physics)
        Slides
      • 15:10
        Update on bias dependent damage in different silicon material 20m
        G. Kramberger, V. Cindro, I. Mandić, M. Zavrtanik, M. Mikuž, M Jožef Stefan Institute
        Speaker: Gregor Kramberger (JSI, Ljubljana)
        Abstract
        Slides
      • 15:30
        Coffee Break 30m
      • 16:00
        Discussion Session (Pad Detector Characterization & Material Engineering) 30m
        Speakers: Eckhart Fretwurst, Gregor Kramberger
        Slides
  • Tuesday, 5 June
    • 09:00 → 11:10
      Pad Detector Characterization II
      • 09:00
        Determination of the Charge Collection Efficiency in irradiated Silicon Detectors 20m
        M. K. Petterson, H.F.-W. Sadrozinski, C. Betancourt, F. Hurley M. Bruzzi SCIPP, UC Santa Cruz, USA INFN and Università di Firenze, Italy
        Speaker: Hartmut Sadrozinski (SCIPP)
        Abstract
        Slides
      • 09:40
        Systematic Simulations of Charge Collection in Planar (2D) and 3D Si detectors at Various Fluences and Thicknesses 20m
        Zheng Li BNL, Upton, NY 11973-5000, USA
        Speaker: Zheng Li
        Slides
      • 10:00
        Extraction of the doping density of irradiated silicon detectors using C-V data 20m
        M. K. Petterson, H.F.-W. Sadrozinski, C. Betancourt, F. Hurley M. Bruzzi SCIPP, UC Santa Cruz, USA INFN and Università di Firenze, Italy
        Speaker: Hartmut Sadrozinski
        Slides
      • 10:20
        coffee break 30m
      • 10:50
        Discussion Session - Simulation of Pad detectors 20m
    • 11:10 → 17:00
      Full Detector Systems
      • 11:10
        Radiation damage on MOS-structure 20m
        Q. Wei, L. Andricek, H-G. Moser, R. H. Richter Max-Planck-Institute semiconductor laboratory
        Speaker: Qingyu wei (MPI Munich)
        Slides
      • 11:30
        Thin planar pixel detectros for highest radiation levels 20m
        R. Richter, L. Andricek, E. Fretwurst, C. Goessling, G. Lindstroem, G. Kramberger, R. Nisius, H.-G. Moser, MPI fuer Physik, Munich; Uni Hamburg; Uni Dortmund; Josef Stefan Insistute, Ljubljana
        Speaker: Rainer Richter (MPI Munich (HLL))
        Slides
      • 11:50
        Construction of rebondable module and first measurements with RD50 micron sensors and 3D-stc sensors 20m
        S.Kuehn 1, M.Boscardin 2, G.-F. Dalla Betta 3, S. Eckert 1, U. Parzefall 1, K. Jakobs 1, C. Piemonte 2, S. Ronchin 2 1 University of Freiburg, Germany, 2 ITC-irst Trento, Italy, 3 University of Trento, Italy
        Speaker: Susanne Kühn (University of Freiburg)
        Slides
      • 12:10
        lunch break 1h 40m
      • 13:50
        ALIBAVA : A PORTABLE READOUT SYSTEM FOR SILICON MICROSTRIP SENSORS 20m
        Ricardo Marco-Hernández Instituto de Física Corpuscular (CSIC-UV), Valencia, Spain
        Speaker: Ricardo Marco (IFIC, Valencia)
        Slides
      • 14:10
        Neutron irradiation results of Si miniature detectors 20m
        G. Casse University of Liverpool
        Speaker: Gianluigi Casse (Liverpool University)
        Slides
      • 14:30
        Annealing and charge collection measurements of p-type strip detectors irradiated with neutrons 20m
        G. Pellegrini, C. Lacasta, V. Lacuesta,S. Martí,F.Campabadal, C.Escobar, C. García, M. Miñano, M. Lozano, J.M. Rafi, M.Ullan CNM Barcelona and IFIC Valencia
        Speaker: Giulio Pellegrini (CNM)
        Slides
      • 14:50
        Absolute charge measurements using laser setup - progress 20m
        Peter Kodys IPNP, Charles University, Prague
        Speaker: Peter Kodys (Prague)
        Slides
      • 15:10
        Silicon Beam Telescope for Super-LHC Detector Studies 20m
        Panja Luukka, Sandor Czellar, Jaakko Härkönen, Eija Tuominen, Jorma Tuominiemi, Esa Tuovinen (Helsinki Institute of Physics, HIP), Lenny Spiegel (Fermilab), Tobias Barvich, Martin Frey, Alexander Furgeri, Frank Hartmann, Bernhard Ledermann, Hans Jürgen Simonis, Pia Steck (Universität Karlsruhe), Bernard De Callatay, Thomas Keutgen, Vincent Lemaitre, Otilia Militaru, Pierre Rodeghiero (Université catholique de Louvain), Alexander Kaminskiy, Dario Bisello (Università di Padova), Regina Demina, Yuri Gotra, Sergey Korjenevski (University of Rochester)
        Speaker: Eija Tuominen (Helsinki Institute of Physics)
        Slides
      • 15:30
        coffee break 30m
      • 16:00
        Results from the Common RD50 Run at Micron 20m
        M. K. Petterson, H.F.-W. Sadrozinski, C. Betancourt, M. Gerling SCIPP, UC Santa Cruz, USA
        Speaker: Hartmut Sadrozinski
        Slides
      • 16:20
        Discussion Session on Full Detector Systems 40m
    • 17:00 → 18:00
      Collaboration Board Meeting
    • 19:00 → 23:00
      Conference Dinner
      • Buses will leave at 19:00 from the conference spot
      • The dinner will take place at the 'Park of Europe'
  • Wednesday, 6 June
    • 09:00 → 13:00
      3D detectors
      • 09:00
        Full 3D Simulations of BNL Silicon 3D Detectors and Comparisons with other Types of 3D Detectors 20m
        Tanja Palviainen 1,2 and Zheng Li 1 1 Brookhaven National Laboratory 2 Lappeenranta University of Technology
        Speaker: Tanja Palviainen (Lappeenranta University of Technology)
        Abstract
        Slides
      • 09:20
        3D Simulation Studies of Irradiated BNL One-Sided Dual-column 3D Silicon Detector up to 1E16 neq/cm2 20m
        Zheng Li1 and Tanja Palviainen2 1Brookhaven National Laboratory 2Lappeenranta University of Technology
        Speaker: Zheng Li (BNL)
        Abstract
        Slides
      • 09:40
        Simulation results from double-sided and standard 3D detectors 20m
        David Pennicard and others University of Glasgow
        Speaker: David Pennicard (University of Glasgow)
        Abstract
        Slides
      • 10:00
        Coffee break 30m
      • 10:30
        Laser Tests of a p-type 3D Ministrip-Detector, equipped with LHC-Speed electronics 20m
        S.Eckert 1, M.Boscardin 2, G.-F. Dalla Betta 3, S. Kuehn 1, U. Parzefall 1, K. Jakobs 1, C. Piemonte 2, S. Ronchin 2 1 University of Freiburg, Germany, 2 ITC-irst Trento, Italy, 3 University of Trento, Italy
        Speaker: Simon Eckert (Freiburg University)
        Abstract
        Slides
      • 10:50
        Position Sensitive TCT Evaluation of Irradiated 3D-stc Detectors 20m
        M. Zavrtanik, V. Cindro, G. Kramberger, J. Langus, I. Mandić, M. Mikuž, M. Boscardin, G. F. Dalla Betta, C. Piemonte, A. Pozza, S. Ronchin, N. Zorzi, Jožef Stefan Institute and Department of Physics, University of Ljubljana, Slovenia ITC-irst and University of Trento, DIT, Trento, Italy
        Speaker: Gregor Kramberger (Jozef Stefan Institute)
        Abstract
        Slides
      • 11:10
        Production status of 3D detectors at ICEMos and CNM 20m
        Speaker: Celeste Fleta
        Slides
      • 11:30
        Discussion Session on New Structures 45m
        Speaker: Chris Parks (Glasgow University)
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