10th RD50 Workshop

from Monday 4 June 2007 (08:00) to Wednesday 6 June 2007 (18:00)
Vilnius, Lithuania

        : Sessions
    /     : Talks
        : Breaks
4 Jun 2007
5 Jun 2007
6 Jun 2007
AM
09:00
Workshop Welcome (until 09:20)
09:00 Welcome - Juozas Vaitkus (Vilnius University)  
09:10 Introduction - Michael Moll  
Slides
09:20
Defect and Material Characterization & New Materials (until 13:50)
09:20 The WODEAN project - outline and present status - Gunnar Lindstroem (Hamburg University)  
Abstract
Slides
09:50 Analyze of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects. - A. Mekys  
Slides
10:10 Investigation of kinetics of complex defects formation during thermal treatment of neutron irradiation silicon using Fourier transform infrared absorption spectroscopy - Barbara Surma (ITME)  
Slides
10:30 INTERACTION OF INTRINSIC DEFECTS WITH OXYGEN IN NEUTRON-IRRADIATED MCZ-SI: An Infrared Absorption Study - Leonid Murin  
Slides
10:50 --- Coffee Break ---
11:20 Photoluminescence characterisation of the WODEAN samples - Gordon Davies  
Slides
11:40 Investigation of fluence–dependent lifetime variations in proton and neutron highly irradiated Si - Eugenius Gaubas  
Slides
12:00 Radiation-induced structure modification in monocrystalline silicon under high-energy ion irradiation - Andrey Aleev (SSC RF ITEP)  
Abstract
Slides
12:20 Discussion Session (Defect and Material Characterization & New Materials) - Bengt Svensson  
12:50 --- Lunch break ---
09:00
Pad Detector Characterization II (until 11:10)
09:00 Determination of the Charge Collection Efficiency in irradiated Silicon Detectors - Hartmut Sadrozinski (SCIPP)  
Abstract
Slides
09:40 Systematic Simulations of Charge Collection in Planar (2D) and 3D Si detectors at Various Fluences and Thicknesses - Zheng Li  
Slides
10:00 Extraction of the doping density of irradiated silicon detectors using C-V data - Hartmut Sadrozinski  
Slides
10:20 --- coffee break ---
10:50 Discussion Session - Simulation of Pad detectors  
11:10
Full Detector Systems (until 17:00)
11:10 Radiation damage on MOS-structure - Qingyu wei (MPI Munich)  
Slides
11:30 Thin planar pixel detectros for highest radiation levels - Rainer Richter (MPI Munich (HLL))  
Slides
11:50 Construction of rebondable module and first measurements with RD50 micron sensors and 3D-stc sensors - Susanne Kühn (University of Freiburg)  
Slides
12:10 --- lunch break ---
13:50 ALIBAVA : A PORTABLE READOUT SYSTEM FOR SILICON MICROSTRIP SENSORS - Ricardo Marco (IFIC, Valencia)  
Slides
14:10 Neutron irradiation results of Si miniature detectors - Gianluigi Casse (Liverpool University)  
Slides
14:30 Annealing and charge collection measurements of p-type strip detectors irradiated with neutrons - Giulio Pellegrini (CNM)  
Slides
14:50 Absolute charge measurements using laser setup - progress - Peter Kodys (Prague)  
Slides
15:10 Silicon Beam Telescope for Super-LHC Detector Studies - Eija Tuominen (Helsinki Institute of Physics)  
Slides
15:30 --- coffee break ---
16:00 Results from the Common RD50 Run at Micron - Hartmut Sadrozinski  
Slides
16:20 Discussion Session on Full Detector Systems  
09:00
3D detectors (until 13:00)
09:00 Full 3D Simulations of BNL Silicon 3D Detectors and Comparisons with other Types of 3D Detectors - Tanja Palviainen (Lappeenranta University of Technology)  
Abstract
Slides
09:20 3D Simulation Studies of Irradiated BNL One-Sided Dual-column 3D Silicon Detector up to 1E16 neq/cm2 - Zheng Li (BNL)  
Abstract
Slides
09:40 Simulation results from double-sided and standard 3D detectors - David Pennicard (University of Glasgow)  
10:00 --- Coffee break ---
10:30 Laser Tests of a p-type 3D Ministrip-Detector, equipped with LHC-Speed electronics - Simon Eckert (Freiburg University)  
Abstract
Slides
10:50 Position Sensitive TCT Evaluation of Irradiated 3D-stc Detectors - Gregor Kramberger (Jozef Stefan Institute)  
Abstract
Slides
11:10 Production status of 3D detectors at ICEMos and CNM - Celeste Fleta  
Slides
11:30 Discussion Session on New Structures - Chris Parks (Glasgow University)  
PM
13:50
Pad Detector Characterization & Material Engineering (until 18:40)
13:50 Comparison of neutron damage in thin FZ, MCz and epitaxial silicon detectors - Eckhart Fretwurst  
Abstract
Slides
14:10 Epitaxial silicon detectors irradiated with 23 GeV protons - Michael Moll (CERN)  
Abstract
Slides
14:30 p-type Silicon irradiated with 24 GeV/c protons - Vlado Cindro (JSI, Ljubljana, Slovenia)  
Abstract
Slides
14:50 Space charge sign inversion and electric field reconstruction in 24 GeV proton irradiated MCZ Si p+/n(TD)/n+ detectors processed via thermal donor introduction - Jaakko Härkönen (Helsinki Institute of Physics)  
Slides
15:10 Update on bias dependent damage in different silicon material - Gregor Kramberger (JSI, Ljubljana)  
Abstract
Slides
15:30 --- Coffee Break ---
16:00 Discussion Session (Pad Detector Characterization & Material Engineering) - Eckhart Fretwurst Gregor Kramberger  
Slides
17:00
Collaboration Board Meeting (until 18:00)
19:00
Conference Dinner (until 23:00)