Name: 10th RD50 Workshop
Start: 2007-06-04T08:00:00+02:00
End: 2007-06-06T18:00:00+02:00
Location: Vilnius, Lithuania

10th RD50 Workshop

from Monday, 4 June 2007 (08:00) to Wednesday, 6 June 2007 (18:00)

Monday, 4 June 2007
09:00 Workshop Welcome
09:00 - 09:20
Contributions

09:00 Welcome - Juozas Vaitkus (Vilnius University)

09:10 Introduction - Michael Moll
09:20 Defect and Material Characterization & New Materials
09:20 - 13:50
Contributions

09:20 The WODEAN project - outline and present status - Gunnar Lindstroem (Hamburg University)

09:50 Analyze of microinhomogeneity of irradiated Si by Hall and magnetoresistance effects. - A. Mekys

10:10 Investigation of kinetics of complex defects formation during thermal treatment of neutron irradiation silicon using Fourier transform infrared absorption spectroscopy - Barbara Surma (ITME)

10:30 INTERACTION OF INTRINSIC DEFECTS WITH OXYGEN IN NEUTRON-IRRADIATED MCZ-SI: An Infrared Absorption Study - Leonid Murin

11:20 Photoluminescence characterisation of the WODEAN samples - Gordon Davies

11:40 Investigation of fluence–dependent lifetime variations in proton and neutron highly irradiated Si - Eugenius Gaubas

12:00 Radiation-induced structure modification in monocrystalline silicon under high-energy ion irradiation - Andrey Aleev (SSC RF ITEP)

12:20 Discussion Session (Defect and Material Characterization & New Materials) - Bengt Svensson
13:50 Pad Detector Characterization & Material Engineering
13:50 - 18:40
Contributions

13:50 Comparison of neutron damage in thin FZ, MCz and epitaxial silicon detectors - Eckhart Fretwurst

14:10 Epitaxial silicon detectors irradiated with 23 GeV protons - Michael Moll (CERN)

14:30 p-type Silicon irradiated with 24 GeV/c protons - Vlado Cindro (JSI, Ljubljana, Slovenia)

14:50 Space charge sign inversion and electric field reconstruction in 24 GeV proton irradiated MCZ Si p+/n(TD)/n+ detectors processed via thermal donor introduction - Jaakko Härkönen (Helsinki Institute of Physics)

15:10 Update on bias dependent damage in different silicon material - Gregor Kramberger (JSI, Ljubljana)

16:00 Discussion Session (Pad Detector Characterization & Material Engineering) - Eckhart Fretwurst Gregor Kramberger
Tuesday, 5 June 2007
09:00 Pad Detector Characterization II
09:00 - 11:10
Contributions

09:00 Determination of the Charge Collection Efficiency in irradiated Silicon Detectors - Hartmut Sadrozinski (SCIPP)

09:40 Systematic Simulations of Charge Collection in Planar (2D) and 3D Si detectors at Various Fluences and Thicknesses - Zheng Li

10:00 Extraction of the doping density of irradiated silicon detectors using C-V data - Hartmut Sadrozinski

10:50 Discussion Session - Simulation of Pad detectors
11:10 Full Detector Systems
11:10 - 17:00
Contributions

11:10 Radiation damage on MOS-structure - Qingyu wei (MPI Munich)

11:30 Thin planar pixel detectros for highest radiation levels - Rainer Richter (MPI Munich (HLL))

11:50 Construction of rebondable module and first measurements with RD50 micron sensors and 3D-stc sensors - Susanne Kühn (University of Freiburg)

13:50 ALIBAVA : A PORTABLE READOUT SYSTEM FOR SILICON MICROSTRIP SENSORS - Ricardo Marco (IFIC, Valencia)

14:10 Neutron irradiation results of Si miniature detectors - Gianluigi Casse (Liverpool University)

14:30 Annealing and charge collection measurements of p-type strip detectors irradiated with neutrons - Giulio Pellegrini (CNM)

14:50 Absolute charge measurements using laser setup - progress - Peter Kodys (Prague)

15:10 Silicon Beam Telescope for Super-LHC Detector Studies - Eija Tuominen (Helsinki Institute of Physics)

16:00 Results from the Common RD50 Run at Micron - Hartmut Sadrozinski

16:20 Discussion Session on Full Detector Systems
17:00 Collaboration Board Meeting

17:00 - 18:00

19:00 Conference Dinner

19:00 - 23:00
Wednesday, 6 June 2007
09:00 3D detectors
09:00 - 13:00
Contributions

09:00 Full 3D Simulations of BNL Silicon 3D Detectors and Comparisons with other Types of 3D Detectors - Tanja Palviainen (Lappeenranta University of Technology)

09:20 3D Simulation Studies of Irradiated BNL One-Sided Dual-column 3D Silicon Detector up to 1E16 neq/cm2 - Zheng Li (BNL)

09:40 Simulation results from double-sided and standard 3D detectors - David Pennicard (University of Glasgow)

10:30 Laser Tests of a p-type 3D Ministrip-Detector, equipped with LHC-Speed electronics - Simon Eckert (Freiburg University)

10:50 Position Sensitive TCT Evaluation of Irradiated 3D-stc Detectors - Gregor Kramberger (Jozef Stefan Institute)

11:10 Production status of 3D detectors at ICEMos and CNM - Celeste Fleta

11:30 Discussion Session on New Structures - Chris Parks (Glasgow University)