10th RD50 Workshop

Session

Pad Detector Characterization & Material Engineering

3

4 Jun 2007, 13:50

Vilnius, Lithuania

36. Comparison of neutron damage in thin FZ, MCz and epitaxial silicon detectors

Eckhart Fretwurst

04/06/2007, 13:50

E. Fretwurst (a), L. Andricek (b), F. Hönniger (a), K. Koch (a), G. Kramberger (c), G. Lindström (a), H.G. Moser (b), I. Pintilie (a,d), R. Richter (b), R. Röder (e) (a) University of Hamburg, (b) MPI-Semiconductor Laboratory Munich, (c) J. Stefan Institute Ljubljana, (d) NIMP Bucharest, (e) CiS Institute for Microsensoric Erfurt

5. Epitaxial silicon detectors irradiated with 23 GeV protons

Michael Moll (CERN)

04/06/2007, 14:10

H. Hoedlmoser (a), M. Moll (a), J. Haerkoenen (b), K.Kaska (a), M. Kronberger (a) , J. Trummer (a), P. Rodeghiero (c) (a) CERN, Switzerland; (b) Helsinki Institute of Physics, Finland; (c) Universite Catholique de Louvain

38. p-type Silicon irradiated with 24 GeV/c protons

Vlado Cindro (JSI, Ljubljana, Slovenia)

04/06/2007, 14:30

Vladimir Cindro, Gregor Kramberger, Igor Mandić, Marko Mikuž, Marko Zavrtanik; Jožef Stefan Institute and University of Ljubljana

39. Space charge sign inversion and electric field reconstruction in 24 GeV proton irradiated MCZ Si p+/n(TD)/n+ detectors processed via thermal donor introduction

Jaakko Härkönen (Helsinki Institute of Physics)

04/06/2007, 14:50

Zheng Li, E. Verbitskaya1, V. Eremin, J. Härkönen Brookhaven National Laboratory, Upton, NY 11973-5000 Ioffe Physico-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia Helsinki Institute of Physics, CERN/PH, 1211 Geneva, Switzerland

37. Update on bias dependent damage in different silicon material

Gregor Kramberger (JSI, Ljubljana)

04/06/2007, 15:10

G. Kramberger, V. Cindro, I. Mandić, M. Zavrtanik, M. Mikuž, M Jožef Stefan Institute

14. Discussion Session (Pad Detector Characterization & Material Engineering)

Eckhart Fretwurst, Gregor Kramberger

04/06/2007, 16:00